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Camera device and manufacturing method thereof

A technology of an imaging device and a manufacturing method, which can be applied to radiation control devices, diodes, semiconductor devices, etc., can solve problems such as lower quantum efficiency, and achieve the effect of improving sensitivity and suppressing the deviation of sensitivity.

Inactive Publication Date: 2018-07-24
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quantum efficiency inside silicon (Si) tends to decrease as the pixel size decreases

Method used

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  • Camera device and manufacturing method thereof
  • Camera device and manufacturing method thereof
  • Camera device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment Construction

[0113] The imaging device and its manufacturing method according to the embodiment will be described below. Such as figure 1 As shown, in the imaging device IS, the element isolation insulating film EI is formed on the semiconductor substrate SUB to define the pixel region PE and the peripheral circuit region PC. In the pixel region PE, a p-type well PPW is formed at a prescribed depth from the surface of the semiconductor substrate SUB. In the p-type well PPW, a photodiode PD that converts light incident from the outside into charges and a transfer transistor TT that transfers the charges are formed.

[0114] Photodiode PD has n-type region NR and p-type region PR formed at a predetermined depth from the surface of p-type well PPW. The transfer transistor TT has a gate electrode TGE of the transfer transistor TT formed on the surface of the p-type well PPW with the gate insulating film TGI interposed therebetween. A sidewall insulating film SWI is formed to cover the sidew...

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Abstract

The invention discloses an imaging device and a manufacturing method thereof. An imaging device and a manufacturing method capable of preventing degradation of sensitivity of a pixel portion due to distance deviation between a waveguide and a photodiode and light attenuation due to suppression of reflection of incident light. In the pixel region PE, a waveguide WG that penetrates through the fourth interlayer insulating film IF4 and the like and reaches the sidewall insulating film SWI is formed. The sidewall insulating film SWI has a laminated structure of a silicon oxide film and a silicon nitride film. The waveguide WG is formed so as to penetrate the silicon nitride film of the sidewall insulating film and reach the silicon oxide film SWO of the sidewall insulating film, or to reach the silicon nitride film of the sidewall insulating film.

Description

technical field [0001] The invention relates to an imaging device and a manufacturing method thereof, and is especially suitable for an imaging device with a waveguide. Background technique [0002] Digital cameras and the like use, for example, imaging devices having CMOS (Complementary Metal Oxide Semiconductor: Complementary Metal Oxide Semiconductor) image sensors. This type of imaging device includes a pixel unit in which a photodiode that converts incident light into electric charge is formed, and a peripheral circuit unit that processes the charge converted by the pixel unit as an electrical signal. [0003] In recent years, in order to meet the demand for miniaturization of digital cameras, the pixel size of the pixel portion in the imaging device is also required to be smaller and smaller. As the pixel size becomes smaller, the quantum efficiency inside silicon (Si) also tends to decrease. The quantum efficiency refers to the number of output electrons per photon,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14629H01L27/14685H01L27/14612H01L27/14643H01L27/14625
Inventor 富松孝宏神野健川村武志
Owner RENESAS ELECTRONICS CORP