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A chemical mechanical polishing method and device

A chemical-mechanical and grinding method technology, used in grinding devices, grinding machine tools, metal processing equipment, etc., can solve problems such as instability, inability to maintain removal rate, reduction of removal rate, etc., and achieve the effect of stable polishing rate

Active Publication Date: 2016-10-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

However, in the prior art, the influence of the exhaust system on the removal rate is not considered, so when a fixed removal rate is adopted, due to the influence of the exhaust system, the ideal removal rate cannot be maintained throughout the CMP process, specifically shown as The removal rate is reduced or unstable, which has a negative impact on the planarization of metal copper

Method used

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  • A chemical mechanical polishing method and device
  • A chemical mechanical polishing method and device

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specific Embodiment 1

[0025] Such as figure 2 As shown, the present invention provides a chemical mechanical polishing device, which includes: a grinding platform, a polishing rate detection system and an exhaust system, wherein the exhaust system further includes an exhaust port 106, an exhaust fan, an exhaust duct, and an exhaust system. Valves and sensors on the air pipeline (not shown in the figure);

[0026] This chemical mechanical polishing device comprises grinding platform, exhaust system and polishing rate detection system 107 altogether, and wherein, grinding platform is used for carrying out the chemical mechanical grinding of wafer, further comprises: grinding disc 100, the grinding pad 101 that is fixed on the grinding disc 100 1. The grinding head 102 and the grinding fluid supply pipe 105 are driven by a motor, and one end of the rotating shaft 103 below the grinding disc 100 is connected to the driving motor and the other end is connected to the grinding disc 100 . The grinding l...

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Abstract

The invention discloses a chemical mechanical polishing method and device. By means of the chemical mechanical polishing method and device, the current polishing speed of a wafer is monitored in real time through a polishing speed detection system connected with a polishing platform and compared with a set target polishing speed, a corresponding feedback signal is sent to an exhaust system according to the comparison result, the exhaust system is controlled to increase or decrease gas pressure inside an exhaust pipeline, the current polishing speed is changed to be the same as the target polishing speed, and therefore the stability of the polishing speed in the chemical mechanical polishing process is kept.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method and device. Background technique [0002] In the current semiconductor manufacturing process, chemical mechanical polishing (CMP) process is used in many cases, such as shallow trench isolation (STI) silicon oxide polishing, local interconnect (LI) silicon oxide polishing, interlayer dielectric (ILD) silicon oxide Polished and double Damascus copper polished etc. [0003] Schematic diagram of the chemical mechanical grinding device in the prior art, such as figure 1 As shown, the chemical mechanical polishing device comprises a grinding platform and an exhaust system altogether, wherein the grinding platform is used for chemical mechanical grinding of wafers, and further includes: a grinding disc 100, a grinding pad 101 fixed on the grinding disc 100, driven by a motor The grinding head 102 and the grinding liquid supply pipe 105...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B37/005
CPCB24B37/005B24B37/04
Inventor 唐强李佩汤露奇
Owner SEMICON MFG INT (SHANGHAI) CORP
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