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Chemical mechanical polishing solution for large-sized silicon wafers and preparation method thereof

A chemical machinery, polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., to reduce damage layer, reduce surface tension, improve polishing efficiency.

Active Publication Date: 2013-07-10
BEIJING GRISH HITECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there have been several R&D and production companies of polishing fluid in China in recent years, in general, there is no company whose products can replace imported products and occupy a place in the domestic market.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] The preparation method of chemical mechanical polishing fluid for large-size silicon chip of the present invention comprises the following steps:

[0044] (1) Take a certain amount of deionized water, add an organic base pH regulator to it, and prepare a solution with a mass fraction of 1-10%;

[0045] (2) under the condition of stirring, add 0.01~5% nonionic surfactant to the above solution;

[0046] (3) Add 0.01 to 0.05% of cleaning aid to it under the condition of stirring;

[0047] (4) under the condition of stirring, add 0.01~2% chelating agent and 0.01~0.03% inorganic alkali pH value adjusting agent thereinto;

[0048] (5) Under the condition of agitation, add the silica sol with particle diameter 30~150nm, concentration 1~50%, pH=10.5±0.5 to it, finally get the large-size silicon chip with pH value of 11.50±0.20. Polishing fluid.

Embodiment 1

[0049] Embodiment 1: preparation of chemical mechanical polishing fluid

[0050] Take 2000 g of deionized water, add 370 g of piperazine, 555 g of ethylene glycol, and 4 g of isopropanol in sequence, and stir evenly. Diameter 50~80nm, silicon dioxide sol 8400g of concentration 30%, the silicon single crystal substrate polishing liquid prepared after stirring evenly, after diluting by 1:9 volume ratio, directly put on machine experiment.

[0051] Polishing experiment:

[0052] On the AMAT Refelxion LK machine, a 300mm silicon wafer (100) was tested, the polishing pad was Rhom&HaasIC1010, the polishing pressure was 3psi, the polishing disc speed was 121 rpm, and the polishing liquid flow rate was 300ml / min. Under the conditions, high quality was obtained. The polished surface, Ra=0.683nm (2μm×2μm), removal rate RR=1.74μm / min, which meets the requirements of the semiconductor industry for the surface quality and removal rate of silicon single crystal substrates.

Embodiment 2

[0053] Embodiment 2: preparation of chemical mechanical polishing fluid

[0054] Take 2000 g of deionized water, add 370 g of piperazine, 555 g of ethylene glycol, and 4 g of isopropanol in sequence, and stir evenly. Diameter 30~50nm, concentration 30% silicon dioxide sol 8400g, the silicon single crystal substrate polishing liquid that makes after stirring evenly, after diluting by the volume ratio of 1:19, go directly to experiment on the machine.

[0055] Polishing experiment:

[0056] On the AMAT Refelxion LK machine, a 300mm silicon wafer (100) was tested, the polishing pad was Rhom&HaasIC1010, the polishing pressure was 2psi, the polishing disc speed was 121 rpm, and the polishing liquid flow rate was 300ml / min. Under the conditions, high quality was obtained. The polished surface, Ra=0.642nm (2μm×2μm), removal rate RR=1.59μm / min, which meets the requirements of the semiconductor industry for the surface quality and removal rate of silicon single crystal substrates.

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Abstract

The invention relates to a chemical mechanical polishing solution for large-sized silicon wafers and a preparation method thereof, and the chemical mechanical polishing solution is mainly applied to the ultraprecision machining of large-sized semiconductor silicon substrate slices, and can obtain a nanometer-level ultrasmooth surface. The polishing solution consists of the following components inpercentage by weight: 5 to 50 percent of silicon dioxide abrasive, 1 to 10 percent of pH value regulator, 0.01 to 5 percent of surfactant, 0.01 to 0.05 percent of cleaning auxiliary, 0.01 to 2 percent of chelator and the balance of deionized water; and the silicon dioxide is added in the state of silicasol. Under proper polishing technological conditions, the polishing solution prepared with the components according to the contents can obtain a high-quality polished surface and meet the requirement of the semiconductor industry on the surface quality and removal rate of silicon substrate slices, and moreover, the invention has the advantages of low cost, easy cleaning, low corrosiveness and the like, and has a good application prospect.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid for large-size silicon wafers and a preparation method thereof. The large-size silicon wafer refers to a silicon single crystal substrate with a specification of 8 inches or more, and the polishing liquid is used for ultra-precision machining of the surface of the large-size silicon single crystal substrate. Background technique [0002] With the advancement of integrated circuit manufacturing technology and the development of technology, on the one hand, in order to increase chip production and reduce unit manufacturing costs, the diameter of silicon substrates is required to continue to increase; The line width is getting thinner. At present, VLSI manufacturing technology has developed into the era of 90nm and 300mm. The characteristic line width technology of 65nm is also entering the market, and the process of 45nm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C23F3/00
Inventor 张永峰王宝运
Owner BEIJING GRISH HITECH
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