Multi-layer copper interconnection barrier layer polishing solution and preparation method thereof

A technology of polishing liquid and barrier layer, applied in the field of microelectronics, can solve the problems of unstable chemical mechanical polishing rate, decreased device reliability, influence of polishing effect, etc., and achieves stable polishing rate, enhanced reliability, and good polishing effect. Effect

Inactive Publication Date: 2021-02-05
HEBEI UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the placement of the polishing liquid, a layer of bacteria will grow on the surface layer, making the chemical mechanical polishing rate unstable, resulting in a decrease in the reliability of the device
[0004] In multi-layer copper wiring polishing liquid, since the introduction of conventional fungicides will affect the polishing effect, the current polishing liquid is ready-to-use and ready-to-use, which is inconvenient to use

Method used

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  • Multi-layer copper interconnection barrier layer polishing solution and preparation method thereof
  • Multi-layer copper interconnection barrier layer polishing solution and preparation method thereof
  • Multi-layer copper interconnection barrier layer polishing solution and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Get abrasive mass fraction and be 40% silica sol 250g, its particle diameter 50nm-90nm, degree of dispersion is ± 3%; FA / OII type chelating agent 7.5g; FA / O surfactant 10g; Glycopper 15g; Concentration is 40 % KOH or 10% nitric acid as pH adjuster. The specific preparation method is as follows: add FA / O type II chelating agent and FA / O surfactant to an appropriate amount of deionized water and stir evenly, then add copper glycinate, stir while adding, until completely dissolved, then mix with silica sol, and stir Evenly, finally make up to 1000g with deionized water, adjust the pH value of the solution to 10, and continue to stir evenly.

[0031] Polishing experiment: use the configured polishing liquid on the Alpsitec-E460E polishing machine; the working pressure is 1.5psi; The coated film is polished, then cleaned with deionized water, dried with nitrogen, and then the thickness of the coated film is measured with four probes, and the polishing rate is calculated acc...

Embodiment 2

[0033] Get abrasive mass fraction and be 40% silica sol 250g, its particle diameter 50nm-90nm, degree of dispersion is ± 3%; FA / OII type chelating agent 7.5g; FA / O surfactant 10g; Glycopper 20g; Concentration is 40 % KOH or 10% nitric acid as pH adjuster. The specific preparation method is as follows: add FA / O type II chelating agent and FA / O surfactant to an appropriate amount of deionized water and stir evenly, then add copper glycinate, stir while adding, until completely dissolved, then mix with silica sol, and stir Evenly, finally make up to 1000g with deionized water, adjust the pH value of the solution to 10, and continue to stir evenly.

[0034] Polishing experiment: use the configured polishing liquid on the Alpsitec-E460E polishing machine; the working pressure is 1.5psi; The coated film is polished, then cleaned with deionized water, dried with nitrogen, and then the thickness of the coated film is measured with four probes, and the polishing rate is calculated acc...

Embodiment 3

[0036] Take 250g of silica sol with an abrasive mass fraction of 40%, its particle size is 50nm-90nm, and its dispersion is ±3%; 5g of citric acid; 10g of FA / O surfactant; 15g of copper glycinate; Make pH adjuster for 10% nitric acid. The specific preparation method is as follows: dissolve citric acid in a small amount of deionized water, then add the dissolved citric acid and FA / O surfactant into an appropriate amount of deionized water and stir evenly, then add copper glycinate, and stir while putting it in until Completely dissolve, then mix with silica sol, stir evenly, and finally make up to 1000g with deionized water, adjust the pH value of the solution to 10, and continue to stir evenly.

[0037]Polishing experiment: use the configured polishing liquid on the Alpsitec-E460E polishing machine; the working pressure is 1.5psi; The coated film is polished, then cleaned with deionized water, dried with nitrogen, and then the thickness of the coated film is measured with fou...

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Abstract

The invention discloses a multi-layer copper interconnection barrier layer polishing solution and a preparation method thereof, and aims to provide a multi-layer copper interconnection barrier layer polishing solution which has a longer service life and is beneficial to enhancing the reliability of a device and a preparation method thereof. The polishing solution is prepared from the following components in percentage by mass: 5-20% of silica sol, 0.1-5% of a chelating agent, 0.15-5% of a bactericide, 0.001-5% of a surfactant, a pH value regulator and the balance of deionized water, wherein the pH value of the polishing solution is 7.5-11; and the bactericide is bivalent copper ions. The polishing solution is good in polishing effect and high in stability through the synergistic effect andreasonable proportion of all the components, and can meet the requirements of the microelectronic industry. Moreover, the polishing solution is alkaline, has a pH value of 7.5-11, does not corrode equipment, and does not pollute the environment. Meanwhile, the raw materials are all domestic, and the production cost is low.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically relates to an alkaline barrier layer polishing solution capable of effectively sterilizing bacteria in multilayer copper interconnection barrier layer CMP and a preparation method thereof. Background technique [0002] The development of integrated circuits has been following Moore's Law, and has achieved a leap from small-scale to medium-scale, to large-scale, ultra-large-scale, and very large-scale, and the integration level is getting higher and higher. With the increase in the number of wiring layers and the further shrinking of the feature size, various problems have appeared in the traditional aluminum wiring, such as RC delay and electromigration failure, which seriously affect the performance of the device. Copper (Cu) replaces aluminum (Al) wiring as an emerging interconnection material due to copper's low resistivity and good resistance to electromigration...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/306
CPCC09G1/02H01L21/30625
Inventor 王辰伟刘玉岭罗翀周建伟牛新环王如
Owner HEBEI UNIV OF TECH
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