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Programmable storage unit

A storage unit and programming voltage technology, which is applied in the field of programmable storage units, can solve the problems of imperfect programmable storage units, and achieve the effects of not easy data loss, high data reliability, and easy encryption

Active Publication Date: 2014-04-16
SHENZHEN STATE MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The invention provides a new programmable storage unit, which solves the technical problem of imperfect programmable storage units in the prior art

Method used

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Examples

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Embodiment 1

[0043] figure 1 For a schematic diagram of a programmable storage unit (hereinafter referred to as a programmable storage unit) provided by an embodiment of the present invention, please refer to figure 1 :

[0044] The programmable storage unit 1 includes a first switch module 11, a second switch module 12, a first antifuse module 13, and a second antifuse module 14, wherein the first switch module 11 and the first antifuse module 13 are connected in parallel Between the power access terminal A and the common output terminal CTL, the second switch module 12 and the second antifuse module 14 are connected in parallel between the common output terminal CTL and the protection terminal B. The first switch module 11 and the second switch module 12 are used to disconnect or connect the circuits at both ends thereof. The first anti-fuse module 13 and the second anti-fuse module 14 change from high impedance to low impedance after the programming voltage is applied, so that the two...

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Abstract

The invention discloses a programmable storage unit. The programmable storage unit comprises a first switch module, a first anti-fuse module, a second switch module and a second anti-fuse module, wherein the first switch module and the first anti-fuse module are connected in parallel between a power connection end and a public output end, the second switch module and the second anti-fuse module are connected in parallel between the public output end and a protective end, the first switch module and the second switch module are used for disconnecting or connecting circuits at the two ends, and the high impedance of the first anti-fuse module and the high impedance of the second anti-fuse module are changed into low impedances after programming voltages are loaded in the first anti-fuse module and the second anti-fuse module. According to the technical scheme disclosed by the invention, the novel programmable storage unit is provided, and the technical problem in an incomplete programmable storage unit in the prior art is solved.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a programmable storage unit. Background technique [0002] Programmable chips, such as FPGA (Field Programmable Gate Array), are composed of regular logic arrays, which can realize different circuit logic designs through different configuration data. Divided into three categories: [0003] 1. The FPGA configured based on the SRAM (Static Random Access Memory) process refers to a configuration data that is first written into the PROM (Programmable Read-Only Memory) outside the FPGA chip, and then read from the PROM when the FPGA starts to work. Read the configuration data into the SRAM, so that the FPGA can realize specific circuit functions. Its disadvantages are: the configuration data will be lost after power failure, and the configuration data needs to be read from the PROM to the SRAM to complete the FPGA configuration during application; when it is disturbed by high-energy part...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/16G11C17/18
Inventor 温长清包朝伟蒋锦艳王佩宁
Owner SHENZHEN STATE MICROELECTRONICS CO LTD
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