Ingot casting method of granular polysilicon

A polysilicon, granular technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., to achieve the effect of easy mastery, good use effect and convenient realization

Inactive Publication Date: 2014-04-23
XIAN HUAJING ELECTRONICS TECH
View PDF4 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a lack of a granular polysilicon ingot casting method with simple steps, convenient implementation and good use effect, w

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ingot casting method of granular polysilicon
  • Ingot casting method of granular polysilicon
  • Ingot casting method of granular polysilicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Such as figure 1 The shown ingot casting method of granular polysilicon includes the following steps:

[0059] Step 1. Loading: The granular polysilicon 1 is charged into the crucible as a silicon material for ingot casting.

[0060] Such as image 3 As shown, after the charging in step one is completed, the charging structure in the crucible includes granular polysilicon 1 filled in the crucible, and a pad mounted between the inner side wall of the crucible and the granular polysilicon 1. A layer of edge guard 2 formed by assembling block polycrystalline silicon and a layer of cover 3 formed by assembling block polysilicon on the granular polysilicon 1. The cover 3 is located in the edge guard 2; after the filling is completed , The silicon material in the crucible includes granular polysilicon 1, edge guard 2 and cover 3.

[0061] In this embodiment, the crucible is laid flat on a horizontal bottom plate 6, which is provided with an outer guard plate 7 that limits the quar...

Embodiment 2

[0133] In this embodiment, the difference from embodiment 1 is: before charging in step one, a layer of 20mm-thick broken silicon wafers is first laid on the bottom of the crucible to form a broken silicon wafer paving layer 4; In the 10th step, the 5mm-thick broken silicon wafers in the broken silicon paving layer 4 are not melted; the preheating time in the second step is 6h and T1=1185°C, P1=80kW; in the third step T5=1560°C, t=18min, Q1=650mbar; the holding time in the first step is 0.4h; in the second step to the fifth step, T2=1210℃, the heating time is 0.4h; in the sixth step T3=1460℃ and the heating time is 260min ; In the 7th step, T4=1510℃ and the heating time is 260min; in the 8th step T5=1560℃ and the heating time is 260min; the 9th step is 3.5h; the 10th step is 4h.

[0134] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0135] The second step, the first step is to increase: the heating temperature of the ingot furnace is ...

Embodiment 3

[0145] In this embodiment, the difference from embodiment 1 is: before charging in step 1, a layer of 25mm-thick broken silicon wafers is first laid on the bottom of the crucible, and a broken silicon wafer paving layer 4 is formed; In the 10th step, the 20mm-thick broken silicon wafers in the broken silicon pavement layer 4 are not melted; the preheating time in the second step is 10h and T1=1165°C, P1=70kW; in the third step T5=1540°C, t=22min, Q1=550mbar; the holding time in the first step is 0.6h; in the second step to the fifth step, T2=1190℃, the heating time is 0.6h; in the sixth step T3=1440℃ and the heating time is 280min ; In the 7th step, T4=1490℃ and the heating time is 280min; in the 8th step T5=1540℃ and the heating time is 280min; the 9th step is 4.5h; the 10th step is 8h.

[0146] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0147] The second step, the first step is to increase: increase the heating temperature of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Life expectancyaaaaaaaaaa
Life expectancyaaaaaaaaaa
Life expectancyaaaaaaaaaa
Login to view more

Abstract

The invention discloses an ingot casting method of granular polysilicon. The method comprises the following steps: firstly, charging: putting the granular polysilicon into a crucible as silicon ingot casting materials; secondly, preheating; thirdly, melting, wherein the melting process comprises the following steps: step 1, carrying out heat preservation; steps 2 to 5, heating and implementing pressurization; step 6, raising temperature for the first time and keeping pressure, namely raising the temperature to T3 which is equal to 1450 DEG C; step 7, raising the temperature for the second time and keeping the pressure, namely raising the temperature to T4 which is equal to 1500 DEG C; step 8, raising the temperature for the third time and keeping the pressure, namely raising the temperature to T5 which is equal to 1550 DEG C, wherein temperature rise times from the step 6 to step 8 are all 260 to 300 minutes; step 9, carrying out heat preservation; step 10, continuously carrying out the heat preservation; fourthly, growing crystals; fifthly, annealing and cooling. The method disclosed by the invention is simple in steps, reasonable in design, convenient in realization, easily mastered, and good in use effect. Furthermore, ingot casting products with high conversion efficiency can be manufactured by using the low- cost granular polysilicon, thereby achieving the purposes of reducing wastes and lowering cost.

Description

Technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingot casting, in particular to a method for casting granular polycrystalline silicon. Background technique [0002] With the development of technology and industrialization, photovoltaic power generation as an ideal alternative energy source gradually expands its market share. In addition, photovoltaic power generation is currently one of the most important clean energy sources and has great development potential. The key factors restricting the development of the photovoltaic industry are low photoelectric conversion efficiency on the one hand, and high cost on the other. The cost of crystalline silicon material accounts for about 30% of the overall photovoltaic cell cost. How to further reduce costs, reduce waste and improve quality It has always been an urgent requirement of the market. [0003] At present, the most important methods for producing polysilicon materials in the world ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B28/06C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap