Method for preparing 3C-SiC nanoparticles 2nm in grain size through laser ablation process

A technology of nanoparticle and laser ablation, which is applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science. It can solve the problem of uneven size of 3C-SiC nanoparticles and achieve strong and stable light emission. Effect

Inactive Publication Date: 2014-04-30
YANGZHOU UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the defect that the size of 3C-SiC nanoparticles is not uniform in the existing process, and provides a laser

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  • Method for preparing 3C-SiC nanoparticles 2nm in grain size through laser ablation process
  • Method for preparing 3C-SiC nanoparticles 2nm in grain size through laser ablation process

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Embodiment Construction

[0018] The raw material involved in the invention is a 6H-SiC polycrystalline ceramic sheet with a thickness of 1-4 mm and a diameter of more than 2.0 cm. Absolute ethanol and acetone used for cleaning were of analytical grade. The laser used is COMPexPro201 type excimer pulsed pulsed laser.

[0019] First, the commercially available 6H-SiC polycrystalline ceramic sheet was ultrasonically cleaned in deionized water, absolute ethanol, and acetone for 5-10 minutes, and dried with a hair dryer or nitrogen flow. Place it again in deionized water for 3-5 minutes, and then clean the residual organic matter for later use. Then put the cleaned 6H-SiC polycrystalline ceramic sheet in a beaker, add deionized water, the water surface is 4-5 mm higher than the upper surface of the 6H-SiC polycrystalline ceramic sheet. The beaker is placed on a separately controllable mobile platform in the X, Y, and Z directions. The X and Y directions are moved back and forth through the control progra...

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Abstract

The invention discloses a method for preparing 3C-SiC nanoparticles 2nm in grain size through a laser ablation process. The method comprises the steps of sequentially ultrasonically cleaning a 6H-SiC polycrystalline ceramic chip in de-ionized water, absolute ethyl alcohol and acetone for 5-10min, and drying through an electric hair drier or nitrogen flow; ultrasonically processing in de-ionized water for 3-5min, and cleaning residual organic matters; adding the cleaned 6H-SiC polycrystalline ceramic chip in a beaker, and adding de-ionized water which is 4-5mm above the upper surface of the 6H-SiC polycrystalline ceramic chip; placing the beaker on a three-dimensional controllable platform, and repeatedly moving the platform slowly in a horizontal direction; radiating laser on the polycrystalline ceramic chip which is soaked in the de-ionized water for 45-60min by taking an excimer pulse laser as a laser light source at wavelength 248nm and an intensity of 300-350mJ/Pulse after being reflected and focused, thus obtaining 3C-SiC nanoparticles suspending in the de-ionized water. The prepared 3C-SiC nanoparticles disclosed by the invention are about 2nm in grain size and free from an agglomeration phenomenon, and the sample has relatively strong light emission within a purple-blue-blue green light range at wavelength 415-495nm.

Description

technical field [0001] The invention discloses a method for preparing a large amount of cubic silicon carbide nanoparticles with a particle diameter of about 2 nm, and belongs to the technical field of preparation of photoelectric materials and biological research materials. Background technique [0002] Silicon carbide (SiC) is one of the core materials of the third-generation semiconductor, and it has many advantages compared with silicon and gallium arsenide. One of the most typical advantages is that SiC has excellent thermal and chemical stability. SiC is an indirect bandgap semiconductor material. Its effective luminescence comes from the indirect recombination process between impurity levels, so at room temperature, its luminous efficiency is extremely low, invisible to the naked eye, and sometimes difficult to detect with instruments. Compared with bulk materials, SiC nanoparticles with a size lower than the Bohr radius of silicon carbide not only enhance the lumino...

Claims

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Application Information

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IPC IPC(8): C01B31/36B82Y30/00C09K11/65C01B32/956
Inventor 朱骏胡珊陈小兵朱爱萍
Owner YANGZHOU UNIV
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