Method for preparing 3C-SiC nanoparticles 2nm in grain size through laser ablation process

Abstract

The invention discloses a method for preparing 3C-SiC nanoparticles 2nm in grain size through a laser ablation process. The method comprises the steps of sequentially ultrasonically cleaning a 6H-SiC polycrystalline ceramic chip in de-ionized water, absolute ethyl alcohol and acetone for 5-10min, and drying through an electric hair drier or nitrogen flow; ultrasonically processing in de-ionized water for 3-5min, and cleaning residual organic matters; adding the cleaned 6H-SiC polycrystalline ceramic chip in a beaker, and adding de-ionized water which is 4-5mm above the upper surface of the 6H-SiC polycrystalline ceramic chip; placing the beaker on a three-dimensional controllable platform, and repeatedly moving the platform slowly in a horizontal direction; radiating laser on the polycrystalline ceramic chip which is soaked in the de-ionized water for 45-60min by taking an excimer pulse laser as a laser light source at wavelength 248nm and an intensity of 300-350mJ / Pulse after being reflected and focused, thus obtaining 3C-SiC nanoparticles suspending in the de-ionized water. The prepared 3C-SiC nanoparticles disclosed by the invention are about 2nm in grain size and free from an agglomeration phenomenon, and the sample has relatively strong light emission within a purple-blue-blue green light range at wavelength 415-495nm.

Description

technical field [0001] The invention discloses a method for preparing a large amount of cubic silicon carbide nanoparticles with a particle diameter of about 2 nm, and belongs to the technical field of preparation of photoelectric materials and biological research materials. Background technique [0002] Silicon carbide (SiC) is one of the core materials of the third-generation semiconductor, and it has many advantages compared with silicon and gallium arsenide. One of the most typical advantages is that SiC has excellent thermal and chemical stability. SiC is an indirect bandgap semiconductor material. Its effective luminescence comes from the indirect recombination process between impurity levels, so at room temperature, its luminous efficiency is extremely low, invisible to the naked eye, and sometimes difficult to detect with instruments. Compared with bulk materials, SiC nanoparticles with a size lower than the Bohr radius of silicon carbide not only enhance the lumino...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the defect that the size of 3C-SiC nanoparticles is not uniform in the existing process, and provides a laser ablation method to prepare 3C-SiC nanoparticles with a particle diameter of 2 nm. 3C-SiC nanoparticles with a uniform size and shape of about 2 nm, the process is simple

Images