A kind of preparation 3c-sic nano disk, preparation method

Abstract

The invention discloses a 3C-SiC nanometer disc and a preparation method thereof, and belongs to the field of silicon carbide carbon nano-material preparation. The 3C-SiC nanometer particle is in a shape of a disc and has the diameter of 5-30nm and height of 1.5-5nm. A single-walled carbon nanotube array vertically grows on a silicon chip, a Si layer is formed on the top layer of the vertical single-walled carbon nanotube array by evaporation, and the 3C-SiC nanometer disc is prepared on the top layer of the single-walled carbon nanotube array and then is separated. The preparation method has the advantages of simple processes, uniform sample and high crystallization quality.

Description

technical field [0001] The invention belongs to the field of preparing silicon carbide carbon nanometer materials, and in particular relates to a method for preparing 3C-SiC nanodisks with different diameters and heights. Background technique [0002] Silicon carbide (SiC) is one of the core materials of third-generation semiconductors, and it has many advantages compared with the first element semiconductor material (Si) and the second compound semiconductor materials GaAs, GaP and InP. Silicon carbide not only has a large bandgap width (the bandgap widths of 3C, 4H, and 6H types of silicon carbide at room temperature are 2.34, 3.22, and 2.86eV, respectively), but also has a high critical breakdown electric field, high thermal conductivity, and high load. Drift speed and other characteristics of the carrier have great application prospects in high temperature, high frequency, high power, optoelectronics and radiation resistance. Replacing silicon with silicon carbide to pr...

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Problems solved by technology

However, the preparation process of this method is complicated, and the obtained SiC particles are often larger than 20nm in size.

In addition, 3C-SiC multi-chip is not only expensive, but also difficult to prepare and purchase

[0005] Due to its small size, the structure and properties of nanoparticles are quite complex, and its surface state and defect state have a great influence on its luminescence properties, which makes it difficult to control the luminescence of 3C-SiC nanoparticles. there will be great difficulties

At present, there is no report on the preparation of SiC nanomaterials by hot wire CVD, and there is no technical method to prepare 3C-SiC nanoparticles with a height below 5nm and uniform size.

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