Method for preparing single-layer molybdenum disulfide film

A single-layer molybdenum disulfide, thin film technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of uncontrollable number of thin film layers and small area.

Active Publication Date: 2014-04-30
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Existing MoS 2 The preparation of thin films mainly focuses on mechanical peeling, liquid phase peeling, etc., but the number of film layers prepared by these methods is uncontrollable, and the obtained area is relatively small

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  • Method for preparing single-layer molybdenum disulfide film
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  • Method for preparing single-layer molybdenum disulfide film

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Embodiment Construction

[0023] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0024] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

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Abstract

The invention discloses a method for preparing a single-layer molybdenum disulfide film. The method comprises the following steps: providing powdered sulfur and heating and transferring the powdered sulfur to sulfur vapor; blowing the sulfur vapor into a reaction cavity filled with a substrate and molybdenum trioxide powder by utilizing carrier gas; heating the temperature of the reaction cavity to a first preset temperature, and keeping the temperature for a first preset time, so that the molybdenum trioxide and the sulfur vapor are reacted to generate MoO3-x in a gas state to be deposited on the substrate, and x is more than 0 and less than or equal to 1; heating the temperature of the reaction cavity to a second preset temperature, keeping the temperature for a second preset time, continuously introducing the sulfur vapor, so that the sulfur vapor is reacted with the MoO3-x, and forming the single-layer molybdenum disulfide film on the surface of the substrate, wherein the first preset temperature is lower than the second preset temperature. According to the method, the large-area single-layer molybdenum disulfide film with controllable layers can be obtained through a two-step reaction method.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a method for preparing a single-layer molybdenum disulfide thin film. Background technique [0002] Silicon-based integrated circuit technology (CMOS) has achieved tremendous development in the past few decades and has become one of the most important driving forces for modern social and economic development. The main sign of the development of CMOS technology is that the feature size of the device is getting smaller and smaller, and the cutoff frequency is getting higher and higher. Due to the limitation of the carrier mobility of the silicon material itself, the improvement of the speed of silicon-based integrated circuits mainly depends on the reduction of the gate length. As the scale of devices continues to shrink, approaching the limits of processing accuracy and device physics, silicon materials are facing many challenges. Since the discovery of monoato...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/52C23C16/455
Inventor 吴华强袁硕果李寒钱鹤
Owner TSINGHUA UNIV
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