Light-emitting diode junction temperature detection device and detection method
A technology of light-emitting diodes and detection devices, which is applied to measurement devices, electrical devices, thermometers, etc., can solve problems such as deviation of measurement results, and achieve the effect of improving accuracy and reducing the influence of heating phenomenon on junction temperature testing.
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[0020] See figure 1 , From the knowledge of semiconductor physics, figure 1 The reverse saturation current I of the light-emitting diode 10 in 0 The relationship with junction temperature T is:
[0021] (1)
[0022] In the formula, A is the coefficient related to the PN junction type, doping concentration, geometric size, and materials constituting the PN junction of the light emitting diode 10, n is the ideality factor, k is the Boltzmann constant, and q is the electronic charge, T is temperature, E G (T) is the energy band width of the PN junction at temperature T, and the first-order approximation is:
[0023] (2)
[0024] In the formula, β is the temperature coefficient.
[0025] When the heating effect of the test current I on the internal resistance R of the light emitting diode 10 is not considered, the relationship between the forward current I and the forward voltage drop V is:
[0026] (3)
[0027] considering , The above formula can be written as,
[0028] (4)
[0029] Subs...
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