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Apparatus for treating a gas stream

A technology of equipment and airflow, applied in the field of equipment dealing with airflow

Active Publication Date: 2014-04-30
EDWARDS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a "dry" area of ​​the plasma reactor between the electrode (anode) and the reaction chamber, and the electrodes themselves require additional cleaning

Method used

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  • Apparatus for treating a gas stream
  • Apparatus for treating a gas stream
  • Apparatus for treating a gas stream

Examples

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Embodiment Construction

[0016] refer to figure 1 and figure 2 , shows an apparatus 10 for processing a gas stream 12 . The device comprises a plasma generator 14 for generating a plasma flame 16 . figure 1 and figure 2 The plasma generator is schematically shown in . relative to the following Figure 7 A more detailed description of the plasma generator is provided. The plasma generator includes an electrode 22 for energizing a source gas to generate a plasma by application of a high voltage. Inlet 24 allows a gas flow to enter the apparatus and directs it into the generated plasma. The wiper 26 is adapted to exit the electrode from the figure 1 reciprocates to the first position shown in the figure 2 The second position, shown in , is used to scrape the surface 28 of the electrode to remove solid deposits that have accumulated on the surface. Alternatively or additionally, in other embodiments of the invention described below, the scraper is arranged to scrape other dry surfaces of the p...

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PUM

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Abstract

In an apparatus (10) for treating a gas stream (12), a plasma generator (14) comprises an electrode (22) for energising a source gas to generate a plasma flare by application of a high voltage. An inlet (24) allows the gas stream into the apparatus and directs it into the generated plasma. A scraper (26) is fitted for reciprocating movement from a first position withdrawn from the electrode to a second position for scraping a surface (28) of the electrode to remove solid deposits accumulated on the surface.

Description

technical field [0001] The invention relates to devices for treating air streams. The invention finds particular application in the treatment of gas streams exhausted from process chambers used in the semiconductor or flat panel display industries. Background technique [0002] A major step in semiconductor device fabrication is the formation of thin films on semiconductor substrates by chemical reactions of vapor precursors. One known technique for depositing thin films on substrates is chemical vapor deposition (CVD), which is usually enhanced by plasma. In this technique, process gases are supplied into a processing chamber containing a substrate and react to form a thin film on the surface of the substrate. Examples of gases supplied to the processing chamber to form a thin film include, but are not limited to: silane and ammonia for forming a silicon nitride film; silane, ammonia, and nitrous oxide for forming a SiON film; One of oxygen and ozone and TEOS; and AI(CH3...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/32B03C3/74B08B1/00H05H1/34
CPCH05H2245/1215B01D2257/553H05H1/34B01D2258/0216B01D2259/818B01D53/323B08B1/008B03C3/743H05H2245/17Y02C20/30B08B1/30B01D53/32H05H1/26C23C16/4407C23C16/50C23C16/52
Inventor C.J.P.克莱门茨S.A.沃罗宁J.L.比德D.麦克格拉思
Owner EDWARDS LTD