Preparation method of oxide film

An oxide film and oxide powder technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of limited metal oxide film, and achieve the effect of expanding the preparation range

Active Publication Date: 2016-01-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the lack of metals with suitable vapor pressure, the metal oxide films that can be prepared by this method are limited.

Method used

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  • Preparation method of oxide film
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  • Preparation method of oxide film

Examples

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preparation example Construction

[0019] see figure 1 As shown, the present invention provides a method for preparing an oxide film grown in a chemical growth reaction device, comprising the steps of:

[0020] Step S1: Mix oxide powder and graphite powder and put them into a quartz reaction boat. The mixing ratio refers to the stoichiometric ratio or the amount of graphite powder is lower than the stoichiometric ratio, but not less than a quarter of the molar amount of the stoichiometric ratio . The oxide powder is an oxide powder of a metal element or an oxide powder of a non-metal element; the elements therein have multiple oxidation valence states, at least one of which is gaseous; the oxide powder and the oxide film The oxidation states are the same or different;

[0021] Step S2: Put the cleaned and dried substrate on the substrate holder and put it into the quartz reaction tube;

[0022] Step S3: feeding inert gas into the quartz reaction tube and the reaction boat respectively; the inert gas includes...

Embodiment 1

[0029] This specific embodiment provides a method for preparing an oxide film, specifically a non-metal oxide film, specifically silicon oxide.

[0030] Silica is thermodynamically stable at normal temperature and pressure, which is solid, and the silicon ions in it are positive tetravalent (Si 4+ ), written as SiO 2 (s). The intermediate valence state has positive divalence (Si 2+ ), unstable, gaseous, written as SiO(g).

[0031] The whole reaction principle is as follows:

[0032] SiO 2 (s)+C(s)--->SiO(g)+CO(g)

[0033] SiO(g)+[O](g)--->SiO 2 (s)

[0034] C(s)--->C(g)

[0035] C(g)+[O](g)--->CO(g)

[0036] C(g)+[O](g)--->CO 2 (g)

[0037] Note: [O] means oxygen-containing gas, which is oxygen, water vapor, nitrous oxide (N 2 O), nitric oxide (NO), nitrogen dioxide (NO 2 ), one or a mixture of several of them.

[0038] Specifically include the following steps:

[0039] S1) Mix silica powder and graphite powder (C), and put them into a reaction boat.

[0040] S...

Embodiment 2

[0047] This example is used to illustrate the preparation of the metal oxide gallium oxide thin film.

[0048] The gaseous intermediate valence oxide is gallium oxide (Ga 2 O) and gallium monoxide (GaO). The preparation principle is as follows:

[0049] Ga 2 o 3 (s)+2C(s)--->Ga 2 O(g)+2CO(g)

[0050] Ga 2 o 3 (s)+C(s)--->2GaO(g)+CO(g)

[0051] Ga 2 O(g)+2[O](g)--->Ga 2 o 3 (s)

[0052] 2GaO(g)+[O](g)--->Ga 2 o 3 (s)

[0053] Among them, the vapor pressure of gallium oxide is greater than that of gallium monoxide, and the selection of the mixing ratio refers to the chemical reaction formula of gallium oxide.

[0054] The difference between this embodiment and embodiment 1 is: in step S1), gallium oxide powder and graphite powder (C) are mixed, put into reaction boat 4; Wherein the purity of gallium oxide powder and graphite powder is all greater than 99.999%, The mixing ratio is 1:2-2:1. In step S3), the inert gas is helium; in step S5), the oxygen-containing gas...

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Abstract

The invention provides an oxide film preparation method. The oxide film preparation method comprises the following steps: step 1, mixing oxide powder and graphite powder, putting the mixture in a reaction boat, and putting the reaction boat in a quartz reaction tube; step 2, putting a cleaned and blow-dried substrate on a substrate support and putting the substrate support in the quartz reaction tube; step3, respectively feeding inert gas into the quartz reaction tube and the reaction kettle boat; step 4. heating the quartz reaction tube; step 5, adjusting the operating temperatures of the reaction boat and the substrate, and adjusting the operating pressure in the quartz reaction tube, feeding oxygen-containing gas into the quartz reaction tube, setting growth time, and depositing an oxide film on the substrate, thus completing oxide film preparation. The oxide film preparation method expands the preparation range of the oxide films and can be used for preparing metallic oxide films and non-metallic oxide films, particularly for certain oxide films difficult to prepare by using other methods at present.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of an oxide film. Background technique [0002] Oxide materials are the first compound materials recognized and utilized by humans. Oxide materials cover superconductors, conductors, semiconductors and insulators, and are widely used in many fields such as industry, agriculture, space, and medicine. Especially in recent years, it has outstanding performance in flat panel displays, light emitting devices, solar cells, gas sensors, and photoelectric converters. [0003] The usual preparation methods of oxide films are: MBE, MOCVD, pulsed laser deposition, magnetron sputtering, spray thermal decomposition, sol-gel, etc. Among them, magnetron sputtering is a commercial oxide film preparation method, and its mature process has been used for commercial production of ITO thin films, but this method has the disadvantages of large equipment investment and low...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/44
Inventor 王晓峰尹玉华李丽娟霍自强王军喜李晋闽曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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