Manufacturing method of X-ray flat panel detector

Abstract

The invention discloses a manufacturing method of an X-ray flat panel detector. The method comprises the following steps: providing a substrate; forming a thin film transistor, a bottom electrode and a conductive element on the substrate, wherein the bottom electrode and the conductive element are electrically connected as a whole through a connecting part; forming a photoelectric conversion element and a top electrode on the bottom electrode; and forming a shading layer above a channel of the thin film transistor and etching the connecting part to disconnect the bottom electrode and the conductive element. According to the method, the bottom electrode (the source) and the conductive element are electrically connected as a whole through the connecting part, and when manufacture of the thin film transistor is completed, static electricity produced by the bottom electrode (the source) is released through the conductive element at the moment when a supporting column contacts or is separated from the bottom surface of the substrate in the subsequent manufacturing process so as to avoid electrostatic breakdown of the thin film transistor.

Description

technical field [0001] The invention relates to the technical field of digital imaging, in particular to a manufacturing method of an X-ray flat panel detection device. Background technique [0002] X-ray Flat Panel Detector (X-ray Flat Panel Detector) has the advantages of clear and delicate images, high resolution, wide gray scale, large amount of information, and large dynamic range, and is widely used in medical, industrial and other fields. The X-ray flat-panel detection device is mainly composed of a scintillator or phosphor layer, an amorphous silicon layer (a-Si) with a photodiode function, and a thin film transistor (Thin film transistor, TFT) array. The principle is that after the scintillator or phosphor layer is exposed to X-rays, the X-ray photons are converted into visible light, and then the amorphous silicon layer with a photodiode function is converted into an image electrical signal, and finally a digital image is obtained. [0003] Such as figure 1 As sh...

AI Technical Summary

Problems solved by technology

Since the drain electrode 150b is electrically connected to the data line 120, the generated charge can be released through the data line 120; while the bottom electrode 160 (source electrode 150a) is relatively isolated, and the amount of charge change is very large, Therefore, the bottom electrode 160 (source electrode 150a) can only discharge charges through the formation of a tip discharge at the edge of the active layer 140 and the gate 130, which will cause the amorphous silicon thin film transistor 300 to be electrostatically broken down

Moreover, there are usually a plurality of support columns 2 in the equipment, and the area of ​​each support column 2 is much larger than the area of ​​a single pixel unit 1, so electrostatic damage can easily cause the X-ray flat panel detection device to fail to display the picture normally, reducing the Production yield of X-ray flat panel detection device

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