The invention discloses an isolated rapid turn-off
metal oxide field effect transistor (MOFET)
driving circuit, which comprises a totem-pole output circuit, a
transformer T, a
negative voltage generation circuit and an
MOSFET, wherein an output point of the totem-pole output circuit is connected with the primary dotted terminal of the
transformer T through the
anode of a blocking
capacitor C1; the secondary dotted terminal of the
transformer T is sequentially connected in series with a secondary
capacitor C2, a
diode D4, an
electrolytic capacitor C3, a
resistor R1 and the
MOSFET, and then is connected to the secondary unlike terminal of the transformer T; a
voltage stabilizing
diode D3 is connected to the two ends of the
secondary side of the transformer T; the base of a
triode Tr3 is connected with the
anode of the secondary
capacitor C2, the collector of the
triode Tr3 is connected with the
cathode of the
diode D4, and the emitter of the
triode Tr3 is connected with the secondary unlike terminal of the transformer T; a diode D6 is reversely connected in parallel with the two ends of the gate input
resistor R1; a
voltage stabilizing diode D5 is connected in parallel with the two ends of the
electrolytic capacitor C3; and a
resistor R2 is connected between the gate and source of the
MOSFET. The circuit is applied to places with high requirements on the anti-interference capability of the
driving circuit and on rapid turn-off and with large duty ratio variation ranges.