The invention relates to a semiconductor photoresist cleaning agent, which comprises alcohol amine, C4-C6 polyol, a solvent, organic base, and an additive. All the components are mixed to form a mixedsolution. Then, a semiconductor wafer containing the photoresist is immersed in the mixed solution, heated to 85 degrees centigrade, immersed for a set period of time, taken out, and dried with high-purity nitrogen. During the photoresist removal process, a resin material in the photoresist is dissolved or decomposed in the mixed solution after the semiconductor wafer containing the photoresist is immersed in the mixed solution, so that a purpose of removing the residual photoresist on the surface of the semiconductor wafer is achieved. At the same time, a conductive layer with a thickness of1.2 [mu]m is formed on the surface of the semiconductor wafer immersed in the mixed solution and has an ability to limit the current and protect electrodes and circuits, thereby achieving functions of preventing a chip surface circuit on a circuit board from being oxidized, and avoiding electrostatic breakdown of the circuit and chipping the edge of the chip.