Semiconductor photoresist cleaning agent

Abstract

The invention relates to a semiconductor photoresist cleaning agent, which comprises alcohol amine, C4-C6 polyol, a solvent, organic base, and an additive. All the components are mixed to form a mixedsolution. Then, a semiconductor wafer containing the photoresist is immersed in the mixed solution, heated to 85 degrees centigrade, immersed for a set period of time, taken out, and dried with high-purity nitrogen. During the photoresist removal process, a resin material in the photoresist is dissolved or decomposed in the mixed solution after the semiconductor wafer containing the photoresist is immersed in the mixed solution, so that a purpose of removing the residual photoresist on the surface of the semiconductor wafer is achieved. At the same time, a conductive layer with a thickness of1.2 [mu]m is formed on the surface of the semiconductor wafer immersed in the mixed solution and has an ability to limit the current and protect electrodes and circuits, thereby achieving functions of preventing a chip surface circuit on a circuit board from being oxidized, and avoiding electrostatic breakdown of the circuit and chipping the edge of the chip.

Description

【Technical field】 [0001] The invention relates to a semiconductor photoresist cleaning agent used in the technical field of integrated circuit manufacturing. 【Background technique】 [0002] With the development of integrated circuit technology, aluminum-tungsten metal connection, copper interconnection damascene process, especially the emergence of hard mask copper interconnection damascene process has appeared successively, which poses a great challenge to the photoresist removal process. Combined with the development of patterning technology, solvent-based photoresist removers, hydroxylamine-based photoresist removers, fluorine-based semi-aqueous photoresist removers, and hydrogen peroxide-based water-based photoresist removers have become mainstream in the market. Most of the existing technologies focus on the development of integrated circuit patterning technology. The photolithography process is a conventional process in the integrated circuit patterning process, and t...

AI Technical Summary

Problems solved by technology

[0002] With the development of integrated circuit technology, aluminum-tungsten metal connection, copper interconnection damascene process, especially hard mask copper interconnection damascene process has appeared successively, which poses a great challenge to the photoresist removal process