Semiconductor photoresist cleaning agent

A technology of photoresist and cleaning agent, which is applied in the fields of optics, photomechanical equipment, photosensitive material processing, etc.

Inactive Publication Date: 2020-02-18
深圳市伯斯特科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the development of integrated circuit technology, aluminum-tungsten metal connection, copper interconnection damascene process, especi

Method used

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Embodiment Construction

[0012] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] A semiconductor photoresist cleaning agent is described below in conjunction with the embodiments, which includes alcohol amine, C4-C6 polyhydric alcohol, solvent, organic base and additives.

[0014] Wherein, the alcohol amine is monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, ethanol, ethyldiethanolamine, and diglycolamine or a combination of two or more substances ;

[0015] Among them, the C4-C6 polyols are threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, tagatose, allose, altrose, edulose Sug...

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Abstract

The invention relates to a semiconductor photoresist cleaning agent, which comprises alcohol amine, C4-C6 polyol, a solvent, organic base, and an additive. All the components are mixed to form a mixedsolution. Then, a semiconductor wafer containing the photoresist is immersed in the mixed solution, heated to 85 degrees centigrade, immersed for a set period of time, taken out, and dried with high-purity nitrogen. During the photoresist removal process, a resin material in the photoresist is dissolved or decomposed in the mixed solution after the semiconductor wafer containing the photoresist is immersed in the mixed solution, so that a purpose of removing the residual photoresist on the surface of the semiconductor wafer is achieved. At the same time, a conductive layer with a thickness of1.2 [mu]m is formed on the surface of the semiconductor wafer immersed in the mixed solution and has an ability to limit the current and protect electrodes and circuits, thereby achieving functions of preventing a chip surface circuit on a circuit board from being oxidized, and avoiding electrostatic breakdown of the circuit and chipping the edge of the chip.

Description

【Technical field】 [0001] The invention relates to a semiconductor photoresist cleaning agent used in the technical field of integrated circuit manufacturing. 【Background technique】 [0002] With the development of integrated circuit technology, aluminum-tungsten metal connection, copper interconnection damascene process, especially the emergence of hard mask copper interconnection damascene process has appeared successively, which poses a great challenge to the photoresist removal process. Combined with the development of patterning technology, solvent-based photoresist removers, hydroxylamine-based photoresist removers, fluorine-based semi-aqueous photoresist removers, and hydrogen peroxide-based water-based photoresist removers have become mainstream in the market. Most of the existing technologies focus on the development of integrated circuit patterning technology. The photolithography process is a conventional process in the integrated circuit patterning process, and t...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/425
Inventor 关美英关清君关雯
Owner 深圳市伯斯特科技有限公司
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