Optical proximity correction method and mask making method

Abstract

An optical proximity correction method and a mask making method are provided. The optical proximity correction method includes: providing an initial photolithographic mask pattern including a plurality of main patterns; obtaining a main graphic group from a plurality of main graphics based on an electrostatic prone judgement rule, wherein the main graphic group comprises at least two adjacent maingraphics; setting auxiliary graphics between adjacent main graphics in the main graphics group, wherein the auxiliary graphics includes auxiliary main graphics and auxiliary connecting graphics on both sides of the auxiliary main graphics, and the auxiliary connecting graphics connect the auxiliary main graphics and the main graphics; performing OPC correction on the plurality of main graphics and auxiliary graphics to form main correction graphics from the main graphics and auxiliary correction graphics from the auxiliary graphics, wherein the auxiliary correction graphics comprise auxiliarycorrection main graphics corresponding to the auxiliary main graphics and auxiliary correction connection graphics corresponding to the auxiliary connection graphics. The optical proximity correctionmethod avoids the occurrence of graphic missing angles or bridging damage at opposite cusps of adjacent main correction graphics.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optical proximity correction method and a mask plate manufacturing method. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology. Photolithography technology can realize the transfer of graphics from the mask to the surface of the silicon wafer to form semiconductor products that meet the design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area of ​​the mask, and the photoresist reacts chemically under the irradiation of light; The photoresist is different to the degree of dissolution of the developer, forming a photoresist pattern, and realizing the tran...

AI Technical Summary

Problems solved by technology

[0005] However, in the mask pattern corresponding to the corrected pattern of optical proximity correction in the prior art, the phenomenon of missing corners or bridge damage is prone to occur at the opposite sharp feet of adjacent patterns.

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