Optical proximity correction method and mask making method

A technology of optical proximity correction and lithography mask, which is applied in the direction of optics, originals for photomechanical processing, photoplate making process of pattern surface, etc., can solve problems such as bridging damage, graphics missing corners, etc., and avoid electrostatic shock Wear, avoid graphics missing corners or bridge damage, reduce the effect of static electricity accumulation

Inactive Publication Date: 2018-12-25
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0005] However, in the mask pattern corresponding to the corrected pattern of optical proximity correction in the prior a

Method used

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  • Optical proximity correction method and mask making method
  • Optical proximity correction method and mask making method
  • Optical proximity correction method and mask making method

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[0026] In the mask pattern corresponding to the correction pattern of the optical proximity correction in the prior art, the relatively sharp feet of the adjacent patterns tend to accumulate charges to form a high electric field, thereby causing the phenomenon of electrostatic breakdown, which in turn leads to the relatively sharp feet of the adjacent patterns. There is a phenomenon of missing corners or damaged bridges.

[0027] In order to avoid the phenomenon of missing corners or bridging damage at the opposite sharp feet of adjacent patterns, one method is to add an anti-static protection ring to the periphery of the photomask. The protection ring mainly plays a certain protective role on the graphics on the periphery of the photomask. However, the guard ring has little protection effect on the pattern positions inside the photomask where charge accumulation is likely to occur. For the graphics inside the photomask, the phenomenon of missing corners or bridging damage wi...

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Abstract

An optical proximity correction method and a mask making method are provided. The optical proximity correction method includes: providing an initial photolithographic mask pattern including a plurality of main patterns; obtaining a main graphic group from a plurality of main graphics based on an electrostatic prone judgement rule, wherein the main graphic group comprises at least two adjacent maingraphics; setting auxiliary graphics between adjacent main graphics in the main graphics group, wherein the auxiliary graphics includes auxiliary main graphics and auxiliary connecting graphics on both sides of the auxiliary main graphics, and the auxiliary connecting graphics connect the auxiliary main graphics and the main graphics; performing OPC correction on the plurality of main graphics and auxiliary graphics to form main correction graphics from the main graphics and auxiliary correction graphics from the auxiliary graphics, wherein the auxiliary correction graphics comprise auxiliarycorrection main graphics corresponding to the auxiliary main graphics and auxiliary correction connection graphics corresponding to the auxiliary connection graphics. The optical proximity correctionmethod avoids the occurrence of graphic missing angles or bridging damage at opposite cusps of adjacent main correction graphics.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optical proximity correction method and a mask plate manufacturing method. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology. Photolithography technology can realize the transfer of graphics from the mask to the surface of the silicon wafer to form semiconductor products that meet the design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area of ​​the mask, and the photoresist reacts chemically under the irradiation of light; The photoresist is different to the degree of dissolution of the developer, forming a photoresist pattern, and realizing the tran...

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Application Information

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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 徐一建梁凤云侯士权王婷倪凌云
Owner HUAIAN IMAGING DEVICE MFGR CORP
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