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Transmissive algan ultraviolet photocathode and preparation method thereof

A kind of ultraviolet light, transmission type technology, applied in the direction of circuit, electrical components, final product manufacturing, etc., can solve the problems of increasing background noise, unable to meet solar blind detection, affecting the detection rate of detectors, etc., to improve quantum efficiency , the effect of reducing the post-interface recombination rate and reducing the growth interface stress

Inactive Publication Date: 2017-01-04
NANJING UNIV OF SCI & TECH
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Problems solved by technology

[0003] The sun is a source of high-intensity ultraviolet radiation. According to the transmission characteristics of solar radiation in the atmosphere, near-ultraviolet light (310nm ~ 400nm) can penetrate the atmosphere to reach the earth's surface, which increases the background noise of GaN-based ultraviolet detectors and affects the The detection rate of the detector, so the GaN photocathode cannot well meet the needs of solar blind detection, and the AlGaN ultraviolet photocathode adjusts the response range of the ultraviolet photocathode by changing the value of the Al composition x on the basis of the GaN photocathode. Improve the detection rate, make the ultraviolet vacuum detector meet the needs of detecting targets in different response bands, and solve the above problems well

Method used

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  • Transmissive algan ultraviolet photocathode and preparation method thereof
  • Transmissive algan ultraviolet photocathode and preparation method thereof
  • Transmissive algan ultraviolet photocathode and preparation method thereof

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Embodiment 1

[0028] Transmissive AlGaN UV photocathode structure such as figure 1 As shown, the cathode consists of a sapphire substrate 1, a p-type uniformly doped AlN buffer layer 2, and a p-type variable composition Al from bottom to top. x Ga 1-x N emitter layer 3 and Cs / O active layer 4.

[0029] figure 2 It is a schematic diagram of the optical structure and Al component structure design of a specific transmissive AlGaN ultraviolet photocathode assembly. Among them, the p-type variable component Al x Ga 1-x The number of sublayers N=1 of the N emission layer.

[0030] The p-type AlN buffer layer 2 is directly epitaxially grown on a sapphire substrate (Al 2 o 3 ) on the substrate 1, a p-type AlN buffer layer 2 is grown by MOCVD epitaxial technology, with a thickness of 500 nm, and a uniform doping method is adopted, and the doping atoms are Mg.

[0031] p-type variable composition Al x Ga 1-x The N emitter layer 3 is grown on the p-type AlN buffer layer 2, and the p-type Al...

Embodiment II

[0040] image 3 It is a schematic diagram of the optical structure and Al component structure design of a specific transmissive AlGaN ultraviolet photocathode assembly. Among them, the p-type variable component Al x Ga 1-x The number of sublayers N=4 of the N emission layer.

[0041] The p-type AlN buffer layer 2 is directly epitaxially grown on a sapphire substrate (Al 2 o 3 ) on the substrate 1, a p-type AlN buffer layer 2 is grown by MOCVD epitaxial technology, with a thickness of 500 nm, and a uniform doping method is adopted, and the doping atoms are Mg.

[0042] p-type variable composition Al x Ga 1-x The N emitter layer 3 is grown on the p-type AlN buffer layer 2, and the p-type Al x Ga 1-x The number of N sublayers N=4, the p-type variable composition Al x Ga 1-x The doping atoms of the 4 sublayers of the N-emitting layer are all Mg, and the doping concentration is 1×10 16 cm -3 . top down, first al x Ga 1-x N sublayer N 1 The Al composition is 0.37, an...

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Abstract

The invention provides a transmission-type AlGaN ultraviolet photocathode and a preparation method thereof. The cathode assembly is composed of a high-quality sapphire substrate, a p-type uniformly-doped AlN buffer layer and a p-type variable-component AlxGa1-xN emission layer from bottom to top. The thickness of the AlN buffer layer is 50-500nm, the AlN buffer layer adopts a p-type uniform doping method, and the doped atom is Mg. The variable-component AlxGa1-xN emission layer is composed of N AlxGa1-xN sub layers, wherein N>=1, the components of Al of the p-type AlxGa1-xN sub layers from top to bottom are respectively x1, x2,...x(n-1) and xn, and 0.24<=x1<=x2<=...<=x(n-1)<=xn<=1. The total thickness of the variable-component AlxGa1-xN emission layer is 20-150nm, the doped atom is Mg, and the doping concentration of Mg meets the following condition: 1*10<14>cm<-3><=Nc<=1*10<18>cm<-3>. A negative electron affinity surface is obtained by adopting ultra-high vacuum high-temperature purification and the Cs / O activation technology. The transmission-type AlGaN ultraviolet photocathode is obtained.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detection materials, in particular to an Al / Ga component control technology based on AlGaN (aluminum gallium nitrogen) ternary compound, semiconductor material doping technology, III-V compound material epitaxy technology and ultra-high vacuum cathode A transmissive AlGaN ultraviolet photocathode combined with activation technology and a preparation method thereof. Background technique [0002] At present, ultraviolet light source technology has achieved rapid development and is widely used in many fields. In order to promote the full use and development of ultraviolet technology, high-performance ultraviolet detectors are one of the indispensable tools. Ultraviolet detection has achieved preliminary development in many application fields, such as corona discharge monitoring, fire detection, biological agent and laser imaging detection and ranging. CsTe and CsI photocathodes have been applie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0304H01L31/18
CPCH01L31/03048H01L31/102H01L31/1848Y02P70/50
Inventor 常本康郝广辉金睦辉陈鑫龙张益军杨明珠石峰程宏昌任彬
Owner NANJING UNIV OF SCI & TECH
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