Photoconduction type X-ray detector based on high-resistance ZnO monocrystal and manufacturing method thereof

An X-ray and photoconductive technology, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of high cost, limit the application and development of diamond detectors, and achieve the effect of reducing costs

Active Publication Date: 2014-05-14
XI AN JIAOTONG UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of preparing nuclear radiation detector-grade diamond artificial crystals is very expensive, which largely limits the application and development of diamond detectors in a wider range of fields.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoconduction type X-ray detector based on high-resistance ZnO monocrystal and manufacturing method thereof
  • Photoconduction type X-ray detector based on high-resistance ZnO monocrystal and manufacturing method thereof
  • Photoconduction type X-ray detector based on high-resistance ZnO monocrystal and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The present invention is described in further detail below in conjunction with accompanying drawing:

[0034] refer to figure 1 and figure 2 , the photoconductive X-ray detector based on the high-resistance ZnO single crystal of the present invention includes a ZnO single crystal substrate 1, the upper surface of the ZnO single crystal substrate 1 is coated with an upper electrode 7 and a ring-shaped guard ring 6, The upper electrode 7 is located in the middle of the guard ring 6, there is a uniform gap between the guard ring 6 and the upper electrode 7, the lower surface of the ZnO single crystal substrate 1 is plated with the lower electrode 8, and the upper electrode 7 and the guard ring 6 are sequentially arranged from top to bottom. Both include a first Al film layer 3 and a first AZO film layer 2, and the lower electrode 8 sequentially includes a second AZO film layer 4 and a second Al film layer 5 from top to bottom, and the thickness of the first AZO film laye...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a photoconduction type X-ray detector based on a high-resistance ZnO monocrystal. The photoconduction type X-ray detector based on the high-resistance ZnO monocrystal comprises a ZnO monocrystal substrate. The upper surface of the ZnO monocrystal substrate is plated with an upper electrode and a protection ring of an annular structure. The upper electrode is located in the middle of the protection ring. Uniform gaps are formed between the protection ring and the upper electrode. The lower surface of the ZnO monocrystal substrate is plated with a lower electrode. The upper electrode and the protection ring respectively comprise a first Al film layer and a first AZO film layer in sequence from top to bottom. The lower electrode comprises a second AZO film layer and a second Al film layer in sequence from top to bottom. The invention further provides a manufacturing method of the photoconduction type X-ray detector based on the high-resistance ZnO monocrystal. The photoconduction type X-ray detector which is based on the high-resistance ZnO monocrystal and manufactured through the manufacturing method has the advantages of being high in high-voltage resistance, low in noise and low in cost.

Description

technical field [0001] The invention belongs to the field of semiconductor nuclear radiation detection devices, and in particular relates to a photoconductive X-ray detector based on a high-resistance ZnO single crystal and a preparation method thereof. Background technique [0002] With the continuous development of nuclear technology in energy, nuclear safety, medical and aerospace applications, traditional gas detectors, solid-state scintillator detectors, and narrow-bandgap semiconductor junction detectors are facing increased sensitivity and challenges in terms of materials and device technology. There are many challenges such as lifespan, room temperature and wider working temperature range, volume reduction, and cost reduction. This field urgently needs the exploration, research and application development of new radiation detection materials and devices that can meet specific requirements. Oak Ridge National Laboratory, Lawrence Livermore National Laboratory, Pacific...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/102H01L31/0296H01L31/0224H01L31/18
CPCH01L31/02161H01L31/0224H01L31/0296H01L31/085H01L31/1828H01L31/1864Y02P70/50
Inventor 贺永宁陈亮赵小龙刘晗欧阳晓平
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products