Fusion memory system of nonvolatile memory and dynamic random access memory

A non-volatile memory, dynamic random access technology, applied in the protection of storage content to prevent loss, memory address/allocation/relocation, input/output to record carriers, etc. Power data loss and other problems, to achieve the effect of solving power loss data loss

Active Publication Date: 2014-05-21
HUAZHONG UNIV OF SCI & TECH
View PDF5 Cites 76 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a fusion memory system of non-volatile memory and dynamic random access memory, which solves the problems of existing computer memory power failure data loss, slow startup, difficulty in reducing energy c

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fusion memory system of nonvolatile memory and dynamic random access memory
  • Fusion memory system of nonvolatile memory and dynamic random access memory
  • Fusion memory system of nonvolatile memory and dynamic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and exemplary embodiments. It should be understood that the exemplary embodiments described here are only used to explain the present invention, and are not intended to limit the applicable scope of the present invention.

[0022] The fusion memory system of the embodiment of the present invention is described below from three aspects: the overall architecture of the fusion memory system, the hardware platform of the fusion memory system, and the fusion memory management module.

[0023] 1. The overall architecture of the integrated memory system

[0024] like figure 1 As shown, in the fusion memory system of the embodiment of the present invention, non-volatile memory (NVM) and dynamic random access memory (DRAM) are used to construct the memory, and the CPU access...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a fusion memory system of a nonvolatile memory and a dynamic random access memory. The nonvolatile memory and the dynamic random access memory are fused together and are jointly used as a memory of a computer system for unified management, the dynamic random access memory can carry out unified addressing together with the nonvolatile memory, part capacity of the dynamic random access memory can be used as a high-speed cache of the nonvolatile memory, the capacity of cache space adapts to data load characteristics by itself and is dynamically matched, so that the access speed of the nonvolatile memory is improved, access frequency of a disk by an I/O can be lowered, and the overall performance of the computer system is improved.

Description

technical field [0001] The invention belongs to the field of computer storage, and in particular relates to a fusion memory system of a nonvolatile memory and a dynamic random access memory. Background technique [0002] The emergence of a new type of non-volatile memory (Non-Volatile Memory, NVM) provides a new way to expand computer memory, and at the same time promotes changes in the computer system structure. The existing NVM includes PCM (Phase Change Memory, phase change memory), STT-RAM (Spin Transfer Torque Random Access Memory, spin transfer torque random access memory), MRAM (Magnetic Random Access Memory, magnetic random access memory), FeRAM ( Ferroelectric Random Access Memory, ferroelectric random access memory), etc. The storage mechanism of the new non-volatile memory is no longer the traditional charge flow formed by electrons to store data, but the use of magnetoresistance effect, resistance change effect, phase change effect and other mechanisms to achiev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F12/02G06F12/08G06F12/16G06F3/06
Inventor 冯丹刘景宁童薇冒伟周文张双武李铮罗锐
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap