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A high-speed and high-current power field effect transistor drive circuit

A technology of power field effect tube and field effect tube, which is applied in the direction of output power conversion device, electrical components, etc., and can solve the problems that cannot meet the high frequency and load capacity applications.

Active Publication Date: 2016-01-06
WUXI YANAO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing integrated drive circuits dedicated to drive power MOSFETs and IGBTs cannot meet the high-frequency and high-load applications. The maximum output current of TPS2812 is only 2A

Method used

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  • A high-speed and high-current power field effect transistor drive circuit
  • A high-speed and high-current power field effect transistor drive circuit
  • A high-speed and high-current power field effect transistor drive circuit

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Embodiment Construction

[0021] Such as figure 1 Among them, the driving front circuit is connected with the driving signal Vg, and the driving front circuit includes capacitor C1, resistors R1, R2, R3, diode D1 and transistors T1 and T2, and the capacitor C1 is connected between the driving signal Vg and the base of the transistor T2 ; Resistor R1 is connected in parallel with capacitor C1, resistor R2 is connected between the base and emitter of transistor T2, resistor R3 is connected between the collector and base of transistor T1; the anode of diode D1 is connected to the emitter of transistor T1, and the cathode of D1 It is connected to the collector of the transistor T2; the transistor T1 is an NPN transistor, the collector of T1 is connected to the voltage of +12V, and the transistor T2 is a PNP transistor; the driving post-circuit is connected to the driving object Q3, and the driving post-circuit includes resistors R12~ R13, diodes D4 and D5, capacitor C3 and field effect transistor Q3, resis...

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Abstract

The invention discloses a high-speed large-current power field-effect transistor driving circuit, which comprises a driving pre-circuit, a totem-pole circuit, and a driving post-circuit, wherein the driving pre-circuit comprises a capacitor C1, resistors R1, R2 and R3, a diode D1 and triodes T1 and T2; the totem-pole circuit consists of diodes D2 and D3, resistors R4 to R11, a capacitor C2 and field-effect transistors Q1 and Q2; the driving post-circuit consists of resistors R12 and R13, diodes D4 and D5, a capacitor C3 and a field-effect transistor Q3; the driving pre-circuit is connected with a driving signal Vg, the driving post-circuit is connected with a driving object Q3, and the totem-pole circuit is connected with the driving pre-circuit and the driving post-circuit. The driving circuit is simple in structure, low in cost, large in output current and high in load-carrying capacity, and can meet the requirement on the high-speed low-voltage large-current driving on the field-effect transistors under specific situations.

Description

technical field [0001] The invention belongs to the technical field of power electronics drive applications, and in particular relates to a high-speed and high-current power field effect tube drive circuit. The drive circuit has a large output current and a strong load capacity, and is suitable for high-speed, low-voltage, and high-current drive of field effect tubes under specific circumstances. occasions. Background technique [0002] With the development of power semiconductor devices, a variety of full-control devices have emerged, the most commonly used are high-power transistors (GTR) suitable for high-power applications, and power Field Effect Transistors (MOSFETs) and Power Insulated Gate Bipolar Transistors (IGBTs) resulting from the combination of GTRs and power MOSFETs. [0003] Among these switching devices, power MOSFET has become the most commonly used device in switching power supply due to its advantages of fast switching speed, low driving power and easy pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/088
Inventor 唐余武邹坤
Owner WUXI YANAO ELECTRONICS TECH
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