Plasma enhanced chemical vapor deposition equipment

Abstract

The invention discloses plasma enhanced chemical vapor deposition (PECVD) equipment, and belongs to the technical field of vapor deposition. The equipment can guarantee the gas uniformity when the flow and pressure of process gas change greatly under a condition that the flow modulating mechanism is not modified. The equipment comprises an upper electrode plate, a lower electrode plate, a radio-frequency cover, and a diffusion plate; the upper electrode plate is communicated with the radio-frequency power supply through the radio-frequency cover, and the lower electrode plate is grounded; the radio-frequency plate is provided with a gas inlet pipe and forms a flow modulating cavity with the upper electrode plate; the upper electrode plate is provided with a plurality of through holes, a reaction cavity is arranged under the upper electrode plate, and the lower electrode plate is arranged in the reaction cavity; the PEVCD equipment also comprises a driving device; the diffusion plate is arranged under the gas inlet pipe and is connected to the driving device, and the driving device drives the diffusion plate to move up and down relative to the radio-frequency cover. The PECVD equipment can be applied to fields of photovoltage, thin-film transistor, and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a plasma-enhanced chemical vapor deposition equipment. Background technique [0002] With the continuous development of vapor deposition technology, plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition, PECVD) technology is more and more applied to photovoltaic (Photovoltaic, PV), thin film transistor and other fields. [0003] The working principle of PECVD equipment is: put two electrode plates parallel to each other with a certain distance in a vacuum environment, one of the electrode plates is connected to the radio frequency (Radio Frequency) power supply, and the other electrode plate is grounded, so that the two electrode plates produce RF electric field. The substrate to be coated is placed between two electrode plates; the coating process gas first passes through the uniform flow chamber for uniform flow, and the...

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Problems solved by technology

[0005] For example, the gas flow and pressure of the dry cleaning process are generally higher than the gas flow and pressure of the coating process. Therefore, if the uniformity of the gas in the coating process is ensured, the uniformity of the gas in the dry cleaning process It will be relatively poor, resulting in poor uniformity of dry cleaning, resulting in low utilization of dry cleaning process gas

Then, if the electrode plate is cleaned unevenly, it will also affect the uniformity of the coating process, so it is necessary to increase the time of the dry cleaning process to thoroughly clean the electrode plate, which reduces the production efficiency of the PECVD equipment.

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