A p-type insertion layer with cyclic structure and growth method
A technology of cyclic structure and growth method, which is applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of self-compensating deep-level hole concentration drop, crack generation, material degradation, etc., to improve crystal quality, Effect of reducing diffusion and improving injection efficiency
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Embodiment 1
[0026] A P-type insertion layer with a cyclic structure and its growth method, the order of its epitaxial structure from bottom to top is: substrate, low-temperature GaN buffer layer, GaN undoped layer, N-type GaN layer, multi-quantum well structure MQW, The growth method of the low-temperature P-type GaN layer, P-type AlGaN layer, high-temperature P-type GaN layer and P-type contact layer includes the following specific steps:
[0027] (1) Clean the sapphire substrate at a high temperature for 10 minutes in a hydrogen atmosphere at 1050°C, and then perform nitriding treatment;
[0028] (2) Cool down to 500°C, grow a low-temperature GaN buffer layer with a thickness of 25nm, the growth pressure is 500mbar, and the V / III ratio is 200;
[0029] (3) After the growth of the low-temperature GaN buffer layer is completed, stop feeding trimethylgallium (TMGa), raise the substrate temperature to 800°C, and perform in-situ thermal annealing on the low-temperature GaN buffer layer. The ...
Embodiment 2
[0041] A P-type insertion layer with a cyclic structure and its growth method, the order of its epitaxial structure from bottom to top is: substrate, low-temperature GaN buffer layer, GaN undoped layer, N-type GaN layer, multi-quantum well structure MQW, The growth method of the low-temperature P-type GaN layer, P-type AlGaN layer, high-temperature P-type GaN layer and P-type contact layer includes the following specific steps:
[0042] (1) Clean the sapphire substrate at a high temperature for 15 minutes in a hydrogen atmosphere at 1150°C, and then perform nitriding treatment;
[0043] (2) Cool down to 600°C, grow a low-temperature GaN buffer layer with a thickness of 40nm, the growth pressure is 800mbar, and the V / III ratio is 800;
[0044] (3) After the growth of the low-temperature GaN buffer layer is completed, stop feeding trimethylgallium (TMGa), raise the substrate temperature to 1050°C, and perform in-situ thermal annealing on the low-temperature GaN buffer layer. The...
Embodiment 3
[0056] A P-type insertion layer with a cyclic structure and its growth method, the order of its epitaxial structure from bottom to top is: substrate, low-temperature GaN buffer layer, GaN undoped layer, N-type GaN layer, multi-quantum well structure MQW, The growth method of the low-temperature P-type GaN layer, P-type AlGaN layer, high-temperature P-type GaN layer and P-type contact layer includes the following specific steps:
[0057] (1) Clean the sapphire substrate at a high temperature for 12 minutes in a hydrogen atmosphere at 1100°C, and then perform nitriding treatment;
[0058] (2) Cool down to 550°C, grow a low-temperature GaN buffer layer with a thickness of 30nm, the growth pressure is 600mbar, and the V / III ratio is 300;
[0059] (3) After the growth of the low-temperature GaN buffer layer is completed, stop feeding trimethylgallium (TMGa), raise the substrate temperature to 900°C, and perform in-situ thermal annealing on the low-temperature GaN buffer layer. The ...
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