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Semiconductor device for enhancing voltage resistance of device and preparation method thereof

A technology of withstand voltage and semiconductor, which is applied in the field of semiconductor devices and its preparation to improve the withstand voltage of devices, and can solve problems such as limitation, vertical breakdown, and voltage withstand capability being limited by lateral breakdown and also subject to vertical breakdown.

Inactive Publication Date: 2014-06-25
HANGZHOU ENNENG TECH
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  • Abstract
  • Description
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Problems solved by technology

[0005] The performance of GaN HEMTs is mainly reflected by the withstand voltage of the device. For GaN semiconductor devices based on silicon substrates, when a high voltage is applied to the drain of the device, there will be a problem of vertical breakdown, so that the withstand voltage of the device is not only affected by the lateral strike. The penetration limit is also limited by the longitudinal breakdown

Method used

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  • Semiconductor device for enhancing voltage resistance of device and preparation method thereof
  • Semiconductor device for enhancing voltage resistance of device and preparation method thereof
  • Semiconductor device for enhancing voltage resistance of device and preparation method thereof

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0018] While the invention has been described in conjunction with specific embodiments herein, it is apparent that certain changes and modifications will be apparent to those skilled in the art without departing from the true spirit of the invention. Accordingly, the invention is to be understood not from the detailed description herein, but rather from the appended claims.

[0019] Figure 1-4 A preferred embodiment of the present invention is generally shown for manufacturing a semiconductor device structure with improved device withstand voltage capability.

[0020] figure 1 is a first schematic cross-sectional view schematically showing preliminary steps for manufacturing a semiconductor device structure with improved device withstand voltage capability. refer to figure 1 , the device involved in the present invention is a III-V nitride type device gr...

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Abstract

The invention discloses a semiconductor device for enhancing voltage resistance of a device. The semiconductor device is a high-electron-mobility transistor adopting III-V semiconductor material. III-family nitride layer close to a drain electrode part of the semiconductor device is etched via one etching method, and a substrate is doped in an opposite conductive type at the etching part. When the device withstands high voltage, range of an exhaustion region is increased, and thus voltage resistance of the device is enhanced. Modulation is performed from a body electric field to a surface electric field so that vertical voltage resistance of the device is enhanced and transverse voltage resistance is enhanced simultaneously, and thus the whole voltage resistance of the device is enhanced.

Description

technical field [0001] The invention relates to a semiconductor device for improving the withstand voltage capability of devices. The semiconductor device of the invention is mainly used in the field of power electronics. Background technique [0002] The gallium nitride (GaN) semiconductor device of the III-V nitride type device is a new type of semiconductor material device that has developed rapidly in recent years. GaN devices are capable of carrying large currents and supporting high voltages, while also offering very low specific on-resistance and very short switching times. [0003] GaN HEMTs are devices composed of AlGaN / GaN heterojunction structures. They conduct electricity through the two-dimensional electron gas (2DEG) generated on the surface of AlGaN / GaN heterostructures due to internal polarization. Due to the potential well of the heterojunction, the electrons Confined to move in a two-dimensional plane, thereby reducing the impact of impurity scattering, wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0688H01L29/0657H01L29/66431H01L29/778H01L2229/00
Inventor 何敏王珏谢刚
Owner HANGZHOU ENNENG TECH
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