A flip-flop design method against single-event upset and single-event transient pulse

A single-event transient and single-event anti-single-event technology is applied in the direction of pulse generation, pulse technology, and electric pulse generation. It can solve problems such as accidental capture of data, weak SET protection at data input terminals, and wrong data collected by triggers. Reduce power consumption overhead, improve the ability to resist SEU/SET, and avoid the effects of clock overlap

Active Publication Date: 2017-01-11
XIAN INSTITUE OF SPACE RADIO TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SET generally occurs in combinational circuits, but errors caused by SET may be sampled by flip-flops or memories, causing SEU
[0005] At present, most of the anti-SEU circuit-level hardening technologies for flip-flop units are based on the traditional dual interlocking cell (DICE) structure. In the traditional DICE structure, the clock signal is easily disturbed by SET, which will cause the flip-flop to accidentally capture data at the wrong time. ; At the same time, the structure has a weak SET protection ability for the data input end, which will cause the trigger to collect wrong data

Method used

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  • A flip-flop design method against single-event upset and single-event transient pulse
  • A flip-flop design method against single-event upset and single-event transient pulse
  • A flip-flop design method against single-event upset and single-event transient pulse

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Embodiment Construction

[0046] Single event flipping and single event transient effects will cause the function of the flip-flop unit in the CMOS integrated circuit to be faulty, and it cannot be recovered, resulting in abnormal function of the entire device.

[0047] In a variety of anti-SEU flip-flop designs, the flip-flop unit of the DICE structure has less loss in speed, area and power consumption, and has a better protection effect. figure 2 It is a schematic diagram of a basic DICE latch unit and "master-slave" flip-flop circuit. It can be seen that there are 4 charge storage nodes inside the DICE latch, and every 2 storage nodes store the same logic level value. When the incident energy particles flip the potential of one of the nodes, the remaining 3 storage nodes can The level value is restored through DICE's double interlocking structure. Only when two related storage nodes (nodes that store the same logic level) are simultaneously affected by high-energy particles can the entire circuit flip...

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Abstract

The invention discloses a method for designing a trigger resistant to single event upset and single event transient pulses. The method for designing the trigger resistant to the single event upset and the single event transient pulses comprises the steps of circuit reinforcing design and diagram reinforcing design. According to the circuit reinforcing design, a redundant clock DICE trigger circuit with delay filtering is designed based on the DICE structure according to the 0.13-micron bulk silicon CMOS technology. According to the diagram reinforcing design, the distance between storage nodes in the DICE trigger circuit is increased, and the area of a drain region is reduced. The method for designing the trigger resistant to the single event upset and the single event transient pulses has the advantages that the phenomenon of clock overlapping is avoided, power dissipation is reduced, the SEU / SET resistance of the trigger is further improved, cost is low, and the reliability is high.

Description

Technical field [0001] The invention relates to a trigger design method for resisting single event flipping and single event transient pulse, and belongs to CMOS integrated circuit space single event effect protection technology. Background technique [0002] In the space radiation environment, CMOS integrated circuits are susceptible to single event flipping and single event transients, which can cause abnormal device functions. figure 1 It is a cross-sectional view of a CMOS inverter. If its input terminal is connected to a low level, the output is high. When high-energy ions pass through the device, electron-hole pairs are generated in their path. Under the action of the electric field, holes drift to the source end of the NMOS transistor, and electrons drift to the drain end of the NMOS transistor. When these electrons accumulate to a certain extent, the potential of the drain terminal will be pulled from high to low, causing the logic of the output terminal to change from 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/3562
Inventor 周国昌巨艇赖晓玲王轩张健
Owner XIAN INSTITUE OF SPACE RADIO TECH
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