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Photovoltaic silicon wafer cleaning agent and cleaning method thereof

A cleaning agent and silicon wafer technology, applied in the fields of ultrasonic cleaning and chemistry, can solve the problems of unsatisfactory use effect, and achieve the effect of low cost, high efficiency and good cleaning effect.

Inactive Publication Date: 2014-07-02
QINGHAI TIANYUHUI NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, no special cleaning agent has been used, and most of the results are not ideal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 1

[0007] Embodiment 1 one: make cleaning agent, with pure water, sodium carbonate, sodium metasilicate, fatty alcohol polyoxyethylene polyoxypropylene capped polyether, C12 fatty alcohol polyoxyethylene ether, alkylbenzene sulfonate, Alkyl bishydroxylate is mixed according to the ratio of 100:2:2:3:3.5:2:1, and fully stirred; 2: Rinse with pure water, put the silicon chip into the container, add pure water, and clean it with ultrasonic waves for 5 minutes , temperature 50°C, ultrasonic power 80w, frequency 40Hz; three: rinse with detergent, put the silicon wafer into the container, add the above detergent, and use ultrasonic cleaning for 5 minutes, temperature 65°C, ultrasonic power 80w, frequency 40Hz; four: pure Rinse with water, put the silicon wafer into a container, add pure water, and use ultrasonic cleaning for 5 minutes, the temperature is 50°C, the ultrasonic power is 80w, and the frequency is 40Hz; five: drying.

Embodiment 2 1

[0008] Embodiment 2 one: make cleaning agent, with pure water, sodium carbonate, sodium metasilicate, fatty alcohol polyoxyethylene polyoxypropylene capped polyether, C12 fatty alcohol polyoxyethylene ether, alkylbenzene sulfonate, Alkyl dihydroxy acid salts are mixed in a ratio of 100:2:2:3:3.5:2:1, and fully stirred; 2: Rinse with pure water, put the silicon wafer in a container, add pure water, and clean it with ultrasonic waves for 10 minutes , temperature 40°C, ultrasonic power 80w, frequency 40Hz; three: rinse with detergent, put the silicon wafer into the container, add the above detergent, and use ultrasonic cleaning for 10 minutes, temperature 70°C, ultrasonic power 100w, frequency 40Hz; four: pure Rinse with water, put the silicon wafer into a container, add pure water, and clean it with ultrasonic waves for 5 minutes at a temperature of 40°C, ultrasonic power of 80w, and frequency of 40Hz; five: drying.

Embodiment 3 1

[0009] Embodiment 3 one: make cleaning agent, with pure water, sodium carbonate, sodium metasilicate, fatty alcohol polyoxyethylene polyoxypropylene capped polyether, C12 fatty alcohol polyoxyethylene ether, alkylbenzene sulfonate, Alkyl dihydroxy acid salts are mixed in a ratio of 100:2:2:3:3.5:2:1, and fully stirred; 2: Rinse with pure water, put the silicon wafer into a container, add pure water, and clean it with ultrasonic waves for 3 minutes , temperature 60°C, ultrasonic power 60w, frequency 40Hz; three: rinse with detergent, put the silicon wafer into the container, add the above detergent, and use ultrasonic cleaning for 3 minutes, temperature 60°C, ultrasonic power 60w, frequency 40Hz; four: pure Rinse with water, put the silicon wafer into a container, add pure water, and use ultrasonic cleaning for 2 minutes, the temperature is 60°C, the ultrasonic power is 80w, and the frequency is 40Hz; five: drying.

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PUM

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Abstract

A photovoltaic silicon wafer cleaning agent and a cleaning method thereof relate to a photovoltaic silicon wafer cleaning agent and chemical and ultrasonic cleaning methods of the photovoltaic silicon wafer. The invention can be applied to the fields of photovoltaic silicon wafer rinsing and cleaning. The cleaning agent is characterized by comprising the components of pure water, sodium carbonate, sodium metasilicate, fatty alcohol polyoxyethylene polyoxypropylene terminated polyether: C12 fatty alcohol polyoxyethylene ether, alkyl benzene sulfonate and alkyl dihydroxy acid salt in a weight ratio of 100:2:2:3:3.5:2:1. The above raw materials are mixed and stirred. A technical scheme of the cleaning method is as below: 1, preparing a cleaning agent by mixing the raw materials are in proportion, and stirring; 2, flushing with pure water: placing the silicon wafer into a container, adding pure water, conducting ultrasonic cleaning at the temperature of 50 DEG C for 5 min; 3, washing with the cleaning agent: placing the silicon wafer in a container, adding the cleaning agent, conducting ultrasonic cleaning at the temperature of 65 DEG C for 5 min; 4, pure water flushing: placing the silicon wafer in a container, adding pure water, conducting ultrasonic cleaning at the temperature of 50 DEG C for 5 min; and 5, drying.

Description

technical field [0001] The invention relates to a cleaning agent for photovoltaic silicon wafers and a chemical and ultrasonic cleaning method for photovoltaic silicon wafers. Background technique [0002] Solar silicon wafers are the carrier of photovoltaic cells, and the quality of silicon wafers directly determines the conversion efficiency of photovoltaic cells. After several processes such as slicing, chamfering, grinding, and polishing, the surface of solar silicon wafers will inevitably be polluted to varying degrees. Therefore, it is necessary to clean solar silicon wafers to remove some particles and metal ions on the surface and organic matter. However, the quality of solar silicon wafer cleaning will affect the quality of silicon wafers to a certain extent. Improper handling will damage the stability and reliability of silicon wafers, and even make the entire product scrapped. Since the surface of solar silicon wafers must be clean before entering each process, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/831C11D3/10B08B3/12B08B3/08
Inventor 白恒玮
Owner QINGHAI TIANYUHUI NEW ENERGY DEV
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