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High thermal conductivity LED light source assembly

A LED light source, high thermal conductivity technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in making large-sized products, high cost, etc., and achieve the goal of improving high-voltage breakdown resistance and reducing lighting temperature Effect

Active Publication Date: 2016-11-09
SUZHOU JINGPIN OPTOELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although its thermal conductivity and heat resistance are significantly better than insulating resin materials, it can realize high-power LED packaging, but it is not only expensive, but also has the problem of making large-scale products difficult

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The preparation method of the anodic oxidation film described in this embodiment is as follows: first, the above-mentioned aluminum alloy plate is cleaned and descaled, and then the anodic oxidation treatment is carried out in an aqueous citric acid solution containing: 20 g / L of citric acid , 3g / L of 6-aminoacetic acid, 1.0g / L of hydrogen peroxide, 3g / L of triammonium citrate; at a liquid temperature of 10°C and a current density of 1A / dm 2 , Electrolytic treatment for 20 minutes. The obtained dense anodized aluminum film has an insulating durability time greater than 1200 hours.

Embodiment 2

[0030] The preparation method of the anodic oxidation film described in this embodiment is as follows: first, the above-mentioned aluminum alloy plate is cleaned and descaled, and then the anodic oxidation treatment is carried out in an aqueous citric acid solution containing: 30 g / L of citric acid , 4g / L of 6-aminoacetic acid, 1.0g / L of hydrogen peroxide, 5g / L of triammonium citrate; at a liquid temperature of 20°C and a current density of 1A / dm 2 , Electrolytic treatment for 20 minutes. The obtained dense anodized aluminum film has an insulating durability time greater than 1200 hours.

Embodiment 3

[0032] The preparation method of the anodic oxidation film described in this embodiment is as follows: first, the above-mentioned aluminum alloy plate is cleaned and descaled, and then the anodic oxidation treatment is carried out in an aqueous citric acid solution containing: 35 g / L of citric acid , 5g / L of 6-aminoacetic acid, 1.0g / L of hydrogen peroxide, 5g / L of triammonium citrate; at a liquid temperature of 10°C and a current density of 1A / dm 2 , Electrolytic treatment for 30 minutes. The obtained dense anodized aluminum film has an insulating durability time greater than 1500 hours.

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PUM

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Abstract

The invention relates to an LED light source combination body with high thermal conductivity and belongs to the technical field of semiconductor lighting. A resin insulating layer and a high-thermal-conductivity insulating layer are formed on an aluminum alloy substrate. A metal pattern circuit is formed on the resin insulating layer. A metal circuit and high-power LED lamp beads or LED chips are formed on the high-thermal-conductivity insulating layer. The metal pattern circuit on the resin insulating layer is connected with the metal circuit on the high-thermal-conductivity insulating layer through metal connecting bodies. According to the LED light source combination body with the high thermal conductivity, ceramic insulating plates and resin insulating plates which have different heat conductivity coefficients and are made of different materials are arranged on the aluminum alloy substrate, so that the high-reliability insulating aluminum alloy substrate for packaging LEDs and the obviously improved heat dissipation performance is provided, the LED packaged insulating aluminum alloy substrate has excellent thermal conductivity can decrease the lighting temperature of the LED lamp beads or the LED chips, and consequently the high-power LED lamp beads with higher luminance or the high-power LED chips with higher luminance can be installed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, and more specifically, the invention relates to a light source module which is convenient for high-efficiency heat dissipation and is applied to high-power LEDs. Background technique [0002] LED (Light Emitting Diode) technology began in the late 1960s. After about half a century of development, as a new type of light source, it has been obtained due to its incomparable advantages such as energy saving, environmental protection, long life, and fast start-up speed. unprecedented development. High-power LED solid-state lighting is the most important lighting revolution since the invention of the incandescent lamp. Semiconductor LED materials can directly convert electrical energy into light energy, which is the biggest difference from traditional lighting sources. It has high luminous efficiency and energy consumption is only one-eighth of ordinary incandescent lamps; and it has a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/62
CPCH01L33/62H01L33/641
Inventor 高鞠
Owner SUZHOU JINGPIN OPTOELECTRONICS