Method for precisely processing sapphire through double-laser beam sequence scanning

A laser processing head, sapphire technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problem that the processing part is difficult to meet the surface roughness requirements of optical components, and the energy density of ultrafast laser beams is very high, high Problems such as the use of precision optical devices can achieve the effects of reducing processing time and equipment costs, improving processing accuracy, and simplifying procedures

Active Publication Date: 2014-07-30
ZHEJIANG JIATAI LASER SCI & TECH CO LTD
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Problems solved by technology

[0005] However, the existing ultrafast laser direct etching processing method has the following shortcomings: first, the processing accuracy is not high enough, and the processing part is difficult to meet the surface roughness requirements of optical components, which leads to its inability to be used as a high-precision optical device; second, Low efficiency and high energy density requirements for ultrafast laser beams. Only high-end picosecond or femtosecond lasers currently on the market can be used for industrial processing purposes, which pushes up equipment costs and limits the promotion of sapphire products

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  • Method for precisely processing sapphire through double-laser beam sequence scanning

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Embodiment Construction

[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0028] The invention provides a method for sequentially scanning double laser beams to precisely process sapphire, comprising the following steps:

[0029] (1) if figure 1 As shown, an ultrasonic generator 2 is installed on the workbench 1, and a container 3 with a concave opening is fixedly installed above the ultrasonic generator 2. A clamping device 4 is provided in the container 3, and the sapphire workpiece 5 is passed through the clamp. The holding device 4 is fixed in the container; the purpose of the holding device 4 is to fix the sapphire workpiece 5, and its structure can be realized by using the prior art.

[0030] Said container 3 is equipped with a sapphire chemical etching solution, and the liquid level of the sapphire chemical etching solution is level with the upper surface of the sapphire workpiece 5 or lower by 0.01...

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Abstract

The invention provides a method for precisely processing sapphire through double-laser beam sequence scanning. The method comprises the following steps: installing a sapphire workpiece and a laser processing head, outputting a nanosecond pulse laser beam, and carrying out scanning motion according to the to-be-machined track once; then closing the nanosecond pulse laser beam, starting an ultrasonic generator for carrying out chemical corrosion; then outputting a picosecond pulse laser beam for carrying out scanning motion once, and fastly removing a thin-layer material; repeatedly carrying out the steps until the depths of holes or grooves in the surface of the sapphire workpiece meet the processing requirement; and finally, carrying out ultrasonic abrasive polishing to the surface of the sapphire workpiece by adopting an ultrasonic driven abrasive grain polishing solution. The sequence combined processing effects of four precise processing technologies including nanosecond laser thermal treatment, ultrasonic chemical corrosion pretreatment, picoseconds laser precision processing and ultrasonic abrasive grain polishing aftertreatment are combined, the power demand of a needed picoseconds laser device can be effectively reduced under the requirement of equal etching processing efficiency, and the picosecond laser processing time and equipment cost can be shortened and lowered.

Description

technical field [0001] The invention belongs to the technical field of laser processing, and in particular relates to a method for precisely processing sapphire by sequential scanning of nanosecond and picosecond double laser beams. Background technique [0002] The chemical composition of artificial sapphire is aluminum oxide (Al2O3), which is a single crystal of α-Al203, commonly known as corundum crystal. The hardness of sapphire crystal is second only to diamond, and it has excellent optical properties, mechanical properties, electrical properties and chemical stability. Sapphire has good chemical inertia, high melting point, anti-electromagnetic interference, and can work in harsh environments; high strength, sapphire components can be made thinner, and promote the miniaturization and weight reduction of optical systems. Compared with transparent materials such as plastics, resins, and glasses, sapphire has It has incomparable advantages, so it is widely used in many f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/04C30B33/10B24B1/04
Inventor 郑长和潘洪武
Owner ZHEJIANG JIATAI LASER SCI & TECH CO LTD
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