Unlock instant, AI-driven research and patent intelligence for your innovation.

Radiation hardened sram unit

A technology of anti-radiation and memory cells, applied in the field of semiconductors, can solve problems such as B influence, and achieve the effect of improving the ability to resist high-level inversion

Active Publication Date: 2017-02-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although B=1 can pull down the potential of A to a certain extent, A=1 can also affect B

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radiation hardened sram unit
  • Radiation hardened sram unit
  • Radiation hardened sram unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present invention are described in detail below.

[0026] Examples of the described embodiments are shown in the drawings, wherein like or similar reference numerals designate like or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an improved anti-radiation SRAM (Static Random Access Memory) unit. The unit comprises the following structures: phase inverter structures and a transmission structure, wherein the phase inverter structures comprise a first phase inverter structure, a second phase inverter structure, a third phase inverter structure and a fourth phase inverter structure; the phase inverter structures are formed by connecting PMOS (P-channel Metal Oxide Semiconductor) pipes and NMOS (N-channel Metal Oxide Semiconductor) pipes in series; storage nodes are arranged between drain electrodes of the PMOS pipes and drain electrodes of the NMOS pipes; each storage node can control gate voltages of one NMOS pipe of one phase inverter structure and one PMOS pipe of another phase inverter structure; the transmission structure comprises two NMOS pipes; the source electrodes, the grid electrodes and the drain electrodes of the two NMOS popes are respectively connected with a bit line j and an inverse phase line, word lines and storage nodes. The improved anti-radiation SRAM unit provided by the invention has the advantages that each node controls other two nodes through one PMOS and one NMOS and is controlled by one PMOS and one NMOS at the same time, so that the closed loop feedback control between the nodes is realized and the anti-high level turnover capacity is effectively increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an improved anti-radiation SRAM storage unit. Background technique [0002] Integrated circuits are the fastest-renewing electronic products in the world, and memory is always a typical product representing the development level of integrated circuit technology. The improvement of integrated circuit design and manufacturing process level has continuously improved the capacity and performance of SRAM. SRAM is the largest amount of volatile memory used as a computer cache because of its read and write speed. In addition, SRAM is also widely used in aviation, communication, and consumer electronics products. [0003] With the rapid development of aerospace industry and semiconductor technology, all kinds of electronic equipment have been applied to the space with very harsh environment. The space is full of various radiation particles, and the radiation effect will cause th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/413
Inventor 刘鑫刘梦新赵发展韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI