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Catalytic CVD and device therefor

A catalyst and catalyst body technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as the inability to maintain temperature

Active Publication Date: 2014-08-06
HASHIMOTO SHOKAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is also clear that such a temperature of the substrate cannot be maintained due to radiant heat from the catalyst body heated to a high temperature even if the cooling device inside the substrate is operated.

Method used

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  • Catalytic CVD and device therefor

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Embodiment

[0028] According to the present invention, it is assumed that a 30 μm amorphous silicon-based film is formed on a cylindrical substrate. During the film formation process, the vacuum degree of the reaction chamber was 10 6 Pascal, the heating temperature of the linear catalyst body was 1750°C. The wire-shaped catalyst body is composed of tungsten wires with a diameter of 0.7 mm or 0.6 mm and a length of 75 cm, and the number of wires is four. In the process of forming the charge injection preventing layer and the photoconductive layer, the linear catalyst body was set at a distance of 9 cm from the cylindrical base, and the heating temperature of the cylindrical base was 250°C. When forming the surface protective layer, the linear catalyst body was retreated from the cylindrical substrate by a distance of 22 cm, and the heating and cooling device was controlled so that the temperature of the cylindrical substrate was 180°C to 150°C.

[0029] SiH that forms the charge injecti...

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Abstract

Provided is catalytic CVD whereby a tungsten linear catalytic body heated by conduction of electricity to an extremely high temperature between 1,500 and 1,800 C and an aluminum cylindrical base heated to 250 to 260 C are disposed in parallel inside a reaction chamber; a mixed gas of SiH4 and B2H6, a mixed gas of SiH4 and H2, and a mixed gas of SiH4 and NH3 are introduced in succession to inside the reaction chamber, which has been brought to vacuum status by a vacuum pump, and catalytically reacted with the heated catalyst; the decomposition products reach the substrate; and amorphous silicon-based films are deposited in succession as the layer for preventing charge injection, the photoconductive layer, and the surface protective layer, the CVD method being characterized in that before the surface protective layer is formed, the linear catalyst body is maintained away from the substrate surface in order to minimize the effect of radiant heat from the linear catalyst body and to sufficiently lower the substrate temperature.

Description

technical field [0001] The present invention relates to a catalytic CVD method and an apparatus thereof for forming an amorphous silicon-based film on an aluminum cylindrical substrate. Background technique [0002] The technique of forming an amorphous silicon-based film by a catalytic CVD apparatus is being actively studied as a technique comparable to the plasma CVD method or as a technique surpassing it due to an obtainable harder film. A typical catalytic CVD apparatus thereof is disclosed in Patent Document 1. In the related CVD apparatus, a tungsten catalyst body heated to an extremely high temperature of 1500°C to 1800°C by energization and a cylindrical substrate heated to 250°C to 260°C are arranged side by side in a reaction chamber, and the tungsten substrate is heated by a vacuum pump. SiH is introduced into the reaction chamber in a vacuum state 4 and H 2 The raw material gas such as the mixed gas is passed through the heated catalyst body to cause a catalyt...

Claims

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Application Information

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IPC IPC(8): C23C16/44
CPCC23C16/448C23C16/46C23C16/463
Inventor 松村英树桥本博隆
Owner HASHIMOTO SHOKAI
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