Polysilicon wafer etching assistant and application thereof

A technology of polycrystalline silicon wafers and auxiliary agents, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of poor texture stability, poor uniformity, and large texture size, and achieve improved silicon The appearance of flakes, the solution to the difficulty of drying, and the effect of strong hydrophobicity

Active Publication Date: 2014-08-20
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The texturing effect of this acid solution is not very ideal, and the existing problems include: the size of the suede surface is large and the uniformity is not good, the crystal flower is relatively obvious, the reflectivity is slightly high, and the stability of the texturing is not good

Method used

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  • Polysilicon wafer etching assistant and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Apply the texturing process of the polycrystalline silicon sheet texturing auxiliary agent of the present invention, take following process step:

[0024] 1) Preparation of textile auxiliary agent: using deionized water as a solvent, dissolve 0.5g of polyaspartic acid, 0.1g of sodium dodecylbenzenesulfonate, and 1g of triethanolamine in deionized water to obtain 100g of textile additive;

[0025] 2) Preparation of velvet solution: mix 5kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 20kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) dissolved in deionized water to obtain 100kg of acid solution; then add 100g of the texturing additive made in step 1) to the acid solution to obtain the texturing liquid;

[0026] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 5°C, and the texturing time is 200s.

Embodiment 2

[0028] Apply the texturing process of polycrystalline silicon sheet texturing additive of the present invention, take following process step:

[0029] 1) Preparation of textile additives: using deionized water as a solvent, dissolve 12g of polyaspartic acid, 6g of sodium dodecylbenzenesulfonate, and 60g of triethanolamine in deionized water to obtain 1.2kg of textile additives;

[0030] 2) Preparation of cashmere liquid: 18kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 45kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) was dissolved in deionized water to obtain 100kg of acid solution; then 1.2kg of texturizing additive made in step 1) was added to the acid solution to obtain texturing liquid;

[0031] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 30°C, and the texturing time is 40s.

Embodiment 3

[0033] Apply the texturing process of polycrystalline silicon sheet texturing additive of the present invention, take following process step:

[0034] 1) Preparation of texturing additives: using deionized water as a solvent, dissolve 8 g of polyaspartic acid, 3 g of sodium dodecylbenzenesulfonate, and 30 g of triethanolamine in deionized water to obtain 1 kg of texturing additives;

[0035] 2) Preparation of cashmere liquid: 10kg of HF aqueous solution (the mass percentage of HF in HF aqueous solution is 49%) and 32kg of HNO 3 Aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 49%) dissolved in deionized water to obtain 100kg of acid solution; then add 1kg of texturing additive made in step 1) to the acid solution to obtain texturing liquid;

[0036] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 20°C, and the texturing time is 80s.

[0037] figure 1 It is the scanning elect...

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Abstract

The invention provides an etching assistant for polysilicon wafer etching. The invention also provides an etching solution for polysilicon wafer etching, which contains an acid solution and the polysilicon wafer etching assistant. The invention also provides a method for etching a polysilicon wafer, which is used for etching the surface of the polysilicon wafer by using the etching solution. The polysilicon wafer etching assistant influences the etching reaction process, and controls the corrosion speed of the acid for different crystal faces, so that different crystal faces have the same reaction speed, thereby obtaining the structure with blurred crystal pattern and high etching uniformity. The polysilicon wafer effectively improves the appearance of the polysilicon wafer, can lower the reflectivity, and enhances the current and battery efficiency.

Description

technical field [0001] The invention relates to a polycrystalline silicon wafer texturing auxiliary agent and an application thereof, belonging to the technical field of polycrystalline silicon wafer texturing. Background technique [0002] In the manufacturing process of polycrystalline silicon solar cells, texturing the surface of silicon wafers is a key link. The effect of texturing directly affects the conversion efficiency and yield of the final cell. Since the polycrystalline silicon wafer is composed of crystal flowers with different crystal orientations, and the crystal orientation of each crystal flower is randomly distributed, and the crystal flowers are obvious, therefore, in the general texturing process, the wet chemical etching method of acid solution is often used to process the surface of the polycrystalline silicon wafer. velvet. The texturing process is based on the principle of isotropic corrosion of silicon by acid solution, and similar pit-like texture...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
Inventor 章圆圆裴银强陈发胜史文龙
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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