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Spectrum detection method for guiding ALD (Atomic Layer Deposition) prepared oxide semiconductor thin film

An oxide semiconductor and spectral detection technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of high price of XRD equipment, difficulty in popularization, lack of real-time monitoring of film quality, etc.

Inactive Publication Date: 2014-08-27
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

However, there are certain risks in the use of X-rays, and the price of XRD equipment is relatively high, so it is not easy to popularize
Moreover, there is currently a lack of effective real-time monitoring of film quality, which has a negative impact on optimizing growth parameters, controlling material quality, and understanding the reaction process.

Method used

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Experimental program
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Embodiment Construction

[0008] Described in the present invention, it comprises the following steps:

[0009] (1) Use quartz or sapphire as the substrate. Trimethylaluminum (TMA) and water were used as the metal source and oxygen source for the reaction, and high-purity nitrogen was used as the carrier gas and motive gas. The reaction source is introduced into the vacuum chamber in the following order: TMA is introduced into the chamber with a pulse time of 15 milliseconds and a waiting time of 5 seconds; water is passed into the chamber with a pulse time of 15 milliseconds and a waiting time of 5 seconds. The substrate temperature is 150°C~200°C. Repeat the above process several times until the required film thickness.

[0010] (2) Extract the light in the reaction chamber through an optical fiber, measure the absorption spectrum with a near-infrared spectrometer, and detect CH 3 / CH 4 content, judge the reaction process, and guide the prepared Al 2 o 3 film.

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Abstract

The invention belongs to the technical field of semiconductor materials, and relates to a method for determining the content of CH3 / CH4 by using a spectrum detection technology and guiding an ALD (Atomic Layer Deposition) prepared Al2O3 thin film. A near infrared spectrometer is used for analyzing a near infrared spectrum and extent of reaction. The optimal Al2O3 growth conditions are determined by adjusting growth conditions such as growth temperature, pulse time and washing time. The method has the beneficial effects that the near infrared spectrometer is used for measuring a light absorption spectrum, so that the reaction process can be known and controlled in real time, the method has an important function for improving the quality and controllability of oxide films such as ALD growth Al2O3, and meanwhile, the repeatability of materials can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to the detection of organic groups such as C-H and H-Cl by using near-infrared spectroscopy technology, and the determination of CH 3 、CH 4 , HCl content, so as to characterize the prepared ZnO, Al 2 o 3 or TiO 2 The crystal quality of the oxide film guides the growth conditions of the oxide film prepared by ALD. Background technique [0002] Atomic layer deposition technology has important application prospects in many fields such as semiconductor devices, optical devices, biological materials, and micro-nano electromechanical systems. The reaction process is a method of forming a deposited film on the substrate through a chemical adsorption reaction by alternately feeding gas-phase precursor pulses into the reactor. The unique chemical adsorption self-limitation and sequential reaction self-limitation process make it have inherent advantages in controlling film ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/40
Inventor 方铉牛守柱魏志鹏唐吉龙房丹王晓华王菲王东君陈宇林
Owner CHANGCHUN UNIV OF SCI & TECH