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A trench igbt process for improving short-circuit resistance of devices

A short-circuit resistance, trench technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large capacitance, easy damage to switches, large switching surges, etc., to reduce channel density, improve Effect of short-circuit withstand capability

Inactive Publication Date: 2017-05-03
FOSHAN XINGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are the following defects in the way of electrical connection: when the dummy gate is connected to the real trench gate or emitter electrode, the capacitance between them will increase, which will cause a large switching surge and easily damage the switch.
The floating dummy trench will not cause the disadvantages of large switching loss or large switching surge voltage, but because its potential is floating, it cannot effectively guarantee its short-circuit tolerance and withstand voltage

Method used

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  • A trench igbt process for improving short-circuit resistance of devices
  • A trench igbt process for improving short-circuit resistance of devices
  • A trench igbt process for improving short-circuit resistance of devices

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Embodiment Construction

[0017] Figure (1-9) is a trench IGBT process method for improving the short-circuit resistance of the device. The same or corresponding constituent elements are marked with the same reference numerals, and repeated descriptions are sometimes omitted.

[0018] figure 1 It is the initial structure diagram of the vertical trench IGBT process of the embodiment of the present invention, and is a schematic diagram of the material along the cross section of the device. The initial structure diagram of the trench IGBT used to improve the short-circuit resistance of the device, including the drift layer 1. Drift layer 1, which is an N conductivity type semiconductor material, the doping concentration range of N type material is [1e12 / cm 3 , 1e20 / cm 3 ].

[0019] figure 2 It is the first step of the vertical trench IGBT process of the embodiment of the present invention. P-type doping elements are implanted by ion, and the dose range is [1e12 / cm] in the range of [20KeV, 1000KeV]. 2 , 1e15 / c...

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Abstract

The invention provides a trenched IGBT device process for improving the anti-short-circuit ability of devices. Through a novel dummy trench process design, the channel density of devices is effectively reduced on the premise that the withstand voltage of the devices is not affected, thereby ensuring the short-circuit tolerance of the devices. Switching surge voltage caused by a traditional dummy process does not exist in the design, thus ensuring the working safety of the devices.

Description

Technical field [0001] The present invention relates to trench-type insulated gate bipolar transistors (IGBTs), and more particularly to trench-type IGBT devices for improving the short circuit resistance of the device. Background technique [0002] IGBT is a well-known power power electronic device widely used in power electronic devices. For IGBT devices, there is a parasitic JFET area between each package. The JFET resistance is an important part of the device resistance, and it is also an important factor that weakens the conductance modulation effect of the IGBT bipolar device. Therefore, in order to reduce the overall saturation turn-on voltage drop of the device, a trench structure is used to eliminate the parasitic JFET area, which can effectively reduce the overall turn-on voltage drop of the device. [0003] The traditional trench IGBT has a large current density and has the disadvantage of poor short-circuit resistance. Therefore, it is necessary to reduce the saturati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L21/265
CPCH01L29/66348H01L29/7397
Inventor 何志谢刚
Owner FOSHAN XINGUANG SEMICON