A light transmission detection unit of a crystalline silicon wafer defect detection device

Abstract

The invention discloses a light transmittance detection unit of a crystalline silicon wafer defect detection device, which includes a photoelectric coupler used to connect a central processing unit and a light source capable of emitting light with a wavelength of more than 400nm, the light source and the photocoupler Separately arranged on both sides of the silicon chip to be tested, the photosensitive port of the photocoupler is opposite to the light outlet of the light source, the light source illuminates one side of the silicon chip, and the photocoupler receives light from the other side of the silicon chip The optical signal from the side is converted into an electrical signal and then output to process and analyze the electrical signal, thereby obtaining defect data. The invention can not only detect the outer dimension of the silicon wafer, but also effectively detect the hole defect of the silicon wafer, can greatly reduce the phenomenon of battery electrode short circuit, thereby greatly improving the conversion efficiency of the battery, and the detection efficiency is also greatly improved.

Description

technical field [0001] The invention relates to detection technology in the solar photovoltaic field, in particular to a light transmission detection unit of a crystalline silicon wafer defect detection device. Background technique [0002] With the continuous advancement of technology, in order to avoid defective silicon wafers from being used in the production of photovoltaic cells, the technology and equipment for testing various performance parameters of original silicon wafers are gradually applied in the production process of silicon wafers and batteries. Initially, the silicon wafer thickness, resistivity and carbon and oxygen content need to be measured, and now the silicon wafer dimensions, photoluminescence and infrared need to be measured. The testing items of various performance parameters of silicon wafers are gradually increasing, and the coverage is getting wider and wider. , and the test efficiency and accuracy are gradually improving. [0003] When testing ...

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Problems solved by technology

However, this method needs to use inert metal-induced corrosion to expand the scope of pores in the early stage. This condition is very harsh, and the initial period of expanding the scope of pores is relatively long. Therefore, this method is difficult to be widely used in actual production.

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