Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof

A LED device, gradient refractive index technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of unable to meet the requirements of the amount of fluorescent conversion materials, difficult application of high-power devices, limited production of quantum dots, etc., to achieve luminous efficiency Good thermal stability and luminescence, high production efficiency, and the effect of reducing production efficiency

Inactive Publication Date: 2014-09-10
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, for patents CN103430337A and US 8455898B2, it is proposed to use semiconductor quantum dots as the luminescent center. This kind of semiconductor quantum dots is very sensitive to temperature, and the luminous efficiency drops sharply with the increase of temperature, so it is difficult to be applied in high-power devices.
Furthermore, due to the limited production of quantum dots, the current synthesis technology cannot meet the requirements for the amount of fluorescent conversion materials used in industrial mass LED device packaging.

Method used

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  • Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof
  • Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof
  • Multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and packaging method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Embodiment 1: adopt nanometer SiO 2 Scattering agent-encapsulated single-layer structure white LED device

[0045] First use nano-SiO 2 As a scattering agent, it is used to encapsulate single-layer structure white LED devices. SiO 2 The mass ratio of the encapsulating glue in the layer where it is located is set to 0, 1%, 2%, 3%, 4% and 5% respectively. The phosphor powder accounts for 13% by mass of the encapsulating glue in the layer where it is located (the same applies to the following embodiments).

[0046] nano-SiO 2 JY100-01 hydrophobic nano-SiO produced by Anhui Jingye Nano Technology Co., Ltd. 2 , its particle size ≤ 25nm, BET specific surface 170 ± 20, SiO 2 Purity ≥ 99.5%; fluorescent material adopts YBO from Foshan Nanhai Langda Fluorescent Material Co., Ltd. 4 Type YAG: Ce yellow phosphor, its refractive index is 1.823, and its specific gravity is 4.3; the blue LED chip adopts the semi-finished product after solid crystal and wire bonding of Guangdon...

Embodiment 2

[0051] Embodiment 2: adopt nano-SiO 2 Scattering agent encapsulation two-layer structure white light LED device

[0052] This embodiment utilizes nano-SiO 2 As a scattering agent, adopt the same process as in Example 1, and package such as Figure 5 The two-layer structure white LED device shown, its relative luminous intensity varies with the current as Figure 6 shown. It can be seen from the figure that with and without adding nano-SiO 2 Compared with the single-layer packaging structure, except 2% (first layer)-1% (second layer, the following is similar) ( Figure 5 (f)) and 2%-0.5% ( Figure 5 (e)), the luminous intensity of other white LED devices using two-layer structure has been improved, and the highest luminous intensity is 0.5%-0% ( Figure 5 (a)) two-layer structure; followed by 1%-0% ( Figure 5 (b)) and 2%-0% ( Figure 5 (c)) White LEDs with two-layer structure have similar luminous intensity. The luminous intensity of white LEDs with these three struct...

Embodiment 3

[0053] Embodiment 3: adopt nano-SiO 2 White light LED device with three-layer structure encapsulated by scattering agent

[0054]This embodiment utilizes nano-SiO 2 As a scattering agent, adopt the same process as in Example 1, and package such as Figure 7 The three-layer structure white LED device shown, its relative luminous intensity varies with the current as Figure 8 shown. All white LED devices packaged with a three-layer structure were better than those without adding nano-SiO 2 The luminous intensity of single-layer structure LED is high, but it is better than nano-SiO 2 The luminous intensity of the single-layer structure LED with the addition amount of 1% is weak. Using nano-SiO 2 In the three-layer structure of the scattering agent, the highest luminous intensity is 2% (first layer)-1% (second layer)-0% (third layer) ( Figure 7 (a)). In addition, the greater the driving current, the greater the relative luminous intensity, which is still very obvious for ...

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Abstract

The invention discloses a multi-layer white light LED (Light Emitting Diode) device with gradient refractive indexes and a packaging method thereof. The LED device is characterized in that n packaging layers are gradually packed on the LED device layer by layer, wherein n is not less than 1; fluorescent powder and nano-scattering diluents are uniformly mixed in the packaging layer; the refractive index of the packaging layer is less than that of an LED chip, and the refractive indexes of the n packaging layers which face outwards from the LED chip are reduced layer by layer. According to the LED device, by building the multi-layer white light LED device with the gradient refractive indexes, the extracting capacity of the white light LED device on the multi-layer white light LED device can be remarkably improved; furthermore, the device is high in quality and stable and reliable in performance.

Description

technical field [0001] The invention relates to a white light LED device and a packaging method thereof. Specifically, it relates to an LED device with a gradient refractive index multilayer packaging structure and a packaging method thereof, wherein nano-scattering agents and fluorescent powder are evenly mixed into each packaging layer. Background technique [0002] There are many factors restricting the luminous flux and overall luminous efficiency of white LED devices, which not only depend on the luminous efficiency of the chip, the conversion efficiency of the phosphor to the excitation light, and the light transmittance of the transparent silica gel of the packaging material, but also significantly depend on the emission of the LED device. Light extraction rate. Just use GaInN / GaN Blu-ray chip with Y 3 al 5 o 12 : Ce 3+ For white LED devices packaged with (YAG:Ce) yellow phosphor, the refractive index of the GaInN / GaN blue chip is about 2.61, and the refractive i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/58H01L33/50
CPCH01L33/48H01L33/505H01L33/58H01L2933/0033H01L2933/0041H01L2933/005
Inventor 陈雷赵二龙薛少婵陈秀玲邓晓蓉张昭蒋阳
Owner HEFEI UNIV OF TECH
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