Thermal shunt type microwave power amplifier

Abstract

The invention discloses a thermal shunt type microwave power amplifier, comprising a plurality of power units arranged in parallel; wherein each power unit comprises a plurality of transistors; each transistor comprises a base, a collector and an emitter; the collectors and the emitters of the transistors in each power unit are respectively interconnected trough a first metal layer and a second metal layer; the collectors of the transistors in the adjacent power units are electrically connected through first metal interconnection; the emitters of the transistors in the adjacent power units are electrically connected through second metal interconnection; the first metal interconnection comprises the first metal layer, an insulating medium layer and the second metal layer from the bottom up; the second metal interconnection comprises the first metal layer; the first metal layers respectively communicate with a cooling device. According to the thermal shunt type microwave power amplifier, heat dissipation is performed on the shortest path of a heat source, collector metal is introduced to provide a ground heat dissipation path, so that temperature of the power unit is lowered through adding the heat dissipation path, and thereby the amplifier with high efficiency and linearity is obtained.

Description

technical field [0001] The invention relates to the technical field of microwave power amplifiers, in particular to a thermal shunt microwave power amplifier. Background technique [0002] Modern communications require microwave power amplifiers to be able to provide high-power output, and at the same time have good linearity and efficiency. However, for power tubes, due to the low heat dissipation coefficient of the substrate, the high-power output increases the thermal effect of the transistor and forms a high-temperature active device. At this time, the performance of the transistor is degraded, and the linearity and efficiency deteriorate. Even under higher temperature conditions, Its reliability will be affected. Therefore, in order to obtain a high-performance power amplifier, the bottleneck effect of thermal effects should be solved. [0003] The usual practice in the prior art is to improve the heat dissipation environment and reduce the heat source. For example, st...

AI Technical Summary

Problems solved by technology

It is of great significance to obtain low-temperature transistors under certain power consumption conditions, but its heat dissipation effect is not good

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