A
semiconductor device is provided which includes a pair of
metal interconnections (B, C) provided above a
semiconductor substrate (10), a program layer (20) provided over the pair of
metal interconnections (B, C) and in which an opening (21) may be selectively formed in the program layer (20) on the basis of
programming information, and a read circuit (40) reading the
programming information by determining whether such an opening (21) is formed in the program layer (20) by utilizing an electrostatic
capacitance between the pair of
metal interconnections (B, C). The program layer (20) may be made of a material having a
dielectric constant higher than that of air or the program layer (20) may be made of a conductor or a material having a
dielectric constant lower than that of air. Thus, trimming information or information on a device identification (ID) can be stored, even if the
semiconductor device is a logic device that does not have a memory
transistor, by detecting the information that is determined by the electrostatic
capacitance that varies depending on whether or not there is provided an opening (21).