The present invention relates to a
trench gate IGBT device and a manufacturing method thereof, and belongs to the
power semiconductor device technology field, and relates to an
insulated gate bipolar transistor. According to the present invention, by introducing a composite trench structure and a carrier storage layer which are coupled mutually, and introducing an
electrode connected with an emitter at the bottom of a gate
electrode of an injection enhanced gate
transistor (IEGT) device, on one hand, the depth and width of the gate
electrode are reduced under a certain trench depth and width, on the other hand, by the
shielding effect of the introduced electrode connected with the emitter, the
gate capacitance, especially the gate-collector
capacitance of the device is reduced, the switching speed of the device is improved, the switching loss of the device is reduced. Meanwhile, by introducing the
coupled carrier storage layer, the
adverse effect to the positive conduction characteristic of the device which is caused by introducing the gate electrode connected with the emitter is compensated, further the carrier concentration distribution of a whole drift region is improved, and the better compromise of the device positive conduction
voltage drop and the switching loss is obtained.