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ITO film and preparation method thereof

A thin film and substrate technology, which is applied in the field of ITO thin film and ITO thin film preparation, can solve the problem that the resistance uniformity of ITO glass is difficult to control.

Inactive Publication Date: 2014-10-22
YICHANG NANBO DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a method for preparing an ITO thin film to better control the resistance uniformity of the ITO thin film for the problem that the resistance uniformity of the ITO glass for the above-mentioned resistive touch screen is difficult to control

Method used

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  • ITO film and preparation method thereof

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preparation example Construction

[0029] The above-mentioned preparation method of ITO film prepares ITO film in an oxidizing gas atmosphere at a suitable substrate temperature, so that the oxidizing gas is adsorbed into the ITO film and combined with In and Sn atoms to become a part of the ITO film crystal It reduces the number of carriers in the ITO film, reduces the gap resistance in the ITO film, prevents the ITO film from changing the film resistance and gap resistance due to the absorption of reducing gas, and avoids the problem of reducing the resistance of the ITO film , Thereby solving the traditional problem of poor uniformity of resistance caused by solving the problem of resistance reduction.

[0030] The preparation method of the above ITO film is simple in process, and there is no need to increase the original resistance requirement during preparation, and the quality of the ITO film can be better controlled.

[0031] The above-mentioned ITO film preparation method fundamentally solves the problem of ...

Embodiment 1

[0035] 1. Provide a 0.4mm thick glass substrate and clean the glass substrate, then load the glass into the coating line, and use the heater of the coating line to gradually heat the glass substrate to 220°C during the glass travel and maintain it at 220°C.

[0036] 2. Pass N when preparing ITO film 2 As an oxidizing gas, in an oxidizing gas atmosphere, magnetron sputtering is used to prepare an ITO film with a common transmittance and a surface resistance range of 350-500 for resistive touch screens on a glass substrate. Where N 2 The flow rate is 0.3sccm, Ar is used as the process gas, the flow rate of Ar is 120sccm, the voltage of magnetron sputtering is 350V, the power is 3.2kw, and the coating cycle is 50s.

[0037] The UV2450 spectrophotometer produced by Shimadzu was used to measure the light transmittance of the ITO film ≥90%.

[0038] The surface resistance of the prepared ITO film is measured by the SDY-5 four-probe instrument produced by Guangzhou Semiconductor to be 380-...

Embodiment 2

[0040] 1. Provide a 0.7mm glass substrate and clean the glass substrate, then load the glass into the coating line, and use the heater of the coating line to gradually heat the glass substrate to 270°C during the glass travel and maintain it at 270 ℃.

[0041] 2. Pass NO when preparing ITO film 2 As an oxidizing gas, in an oxidizing gas atmosphere, magnetron sputtering is used to prepare high-transmittance TP-400 ohm ITO glass for resistive touch screens with a transmittance of 93% and a resistance range of 400 to 600 ohms on a glass substrate . Among them, NO 2 The flow rate is 0.6sccm, Ar is used as the process gas, the flow rate of Ar is 120sccm, the voltage of magnetron sputtering is 312V, the power is 1.85kw, and the coating cycle is 150s.

[0042] The light transmittance of the ITO film was determined to be ≥93% using a UV2450 spectrophotometer produced by Shimadzu.

[0043] The surface resistance of the prepared ITO film measured by the SDY-5 four-probe instrument produced b...

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Abstract

The invention relates to an ITO film and a preparation method thereof. The preparation method of the ITO film comprises the following steps: providing a glass substrate, heating the substrate, maintaining the substrate at 220-310 DEG C in an atmosphere of an oxidizing gas and preparing the ITO film on the substrate, wherein the oxidizing gas is selected from one of N2, NO and NO2 or one of a mixed gas of Ar and N2, a mixed gas of Ar and NO and a mixed gas of Ar and NO2. The method has the beneficial effects that the oxidizing gas is adsorbed in an ITO film layer, thus reducing the number of carriers in the ITO film layer, reducing the gap resistance in the ITO film layer and avoiding changing the film layer resistance and the gap resistance as the ITO film layer adsorbs a reducing gas; the resistance of the ITO film layer is kept stable, thus solving the problem of resistance reduction, avoiding the problem that the resistance reduction amplitudes and positions do not have regularity and better controlling the resistance uniformity of the ITO film.

Description

Technical field [0001] The invention relates to the technical field of coating, in particular to a method for preparing an ITO film and an ITO film. Background technique [0002] ITO (Indium Tin Oxide) is an n-type thin film material, which is currently the most widely used transparent conductive material in flat panel displays and touch controls. Whether it is LCD, resistive touch screen or capacitive touch screen, ITO is currently widely used as its transparent conductive film. [0003] The ITO film used for resistive touch screens is too thin and has a larger surface area, which is easy to absorb reducing gas. After a period of production, its resistance will naturally drop by about 5% to 15%, but after cleaning and acid etching It rises again, and then drops after the finished product is pasted. Its resistance is not easy to control, causing great quality risks to customers' products. [0004] In order to meet customer requirements, most of the current ITO coating manufacturers...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 刘玉华方凤军
Owner YICHANG NANBO DISPLAY
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