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Embedded word line dynamic random access memory and manufacturing method thereof

A dynamic random access and embedded word line technology, which is applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve the problem of reducing the storage time of embedded word line dynamic random access memory, and achieves improvement Drain leakage current and short storage time, effect of reducing electric field

Active Publication Date: 2014-10-22
WINBOND ELECTRONICS CORP
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Problems solved by technology

[0004] However, the traditional buried word line DRAM uses a single ion concentration ion implantation process to form the source / drain. This implantation method will generate a high electric field under the buried word line gate, thereby The overlapping area between the source / drain and the gate causes a higher gate-induced drain leakage current (GIDL current) and reduces the storage time (retention time) of the embedded word line DRAM

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  • Embedded word line dynamic random access memory and manufacturing method thereof
  • Embedded word line dynamic random access memory and manufacturing method thereof
  • Embedded word line dynamic random access memory and manufacturing method thereof

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[0049] The original drain doping energy is 20KeV, and the doping dose is 2.8×10 13 atoms / cm 2 The process parameters are changed to the doping energy of the first doping region of 35KeV and the doping dose of 1×10 13 atoms / cm 2 ; The doping energy of the second doping region is 10KeV, and the doping dose is 2.4×10 13 atoms / cm 2 . As a result, compared with the original doped region, the storage time of the two doped regions with different doping concentrations can be improved by more than 40 milliseconds.

[0050] image 3 A graph showing the doping concentration curve of the doping region of the embedded word line DRAM according to an embodiment of the present invention. image 3 The vertical axis represents the depth of the embedded word line DRAM, while image 3 The horizontal axis of represents the doping concentration corresponding to the above depth.

[0051] Please refer to image 3 , where curve 314 is figure 1 The doping concentration curve of the well regio...

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Abstract

The invention discloses an embedded word line dynamic random access memory and a manufacturing method thereof. The embedded word line dynamic random access memory comprises a substrate, at least one embedded word line structure, a first doped region and a second doped region, wherein the embedded word line structures are configured in the substrate, the first doped region adjoins the embedded word line structures and is configured in the substrate, and the second doped region is configured in the substrate and is located above the first doped region; and the doping concentration of the first doped region is lower than the doping concentration of the second doped region.

Description

technical field [0001] The present invention relates to a dynamic random access memory and its manufacturing method, and in particular to an embedded word line dynamic random access memory and its manufacturing method. Background technique [0002] Dynamic random access memory is a kind of volatile memory, which is composed of a plurality of storage units. Each memory cell is mainly composed of a transistor and a capacitor controlled by the transistor, and each memory cell is electrically connected to each other through a word line and a bit line. [0003] In order to increase the integration of dynamic random access memory to speed up the operation speed of components, and to meet the needs of consumers for miniaturized electronic devices, a buried word line dynamic random access memory (buried word line DRAM) has been developed in recent years. to meet the above-mentioned needs. [0004] However, the traditional buried word line DRAM uses a single ion concentration ion i...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
Inventor 蔡泓祥郑璨耀
Owner WINBOND ELECTRONICS CORP