Large-power arbitrary-waveform generation device and method

A wave generation and high-power technology, which is applied in the field of high-power arbitrary wave generation devices, can solve the problems of high-precision and high-power arbitrary wave generation technology that cannot be found, and achieve the effects of large output power, high output precision, and flexible waveform output

Inactive Publication Date: 2014-11-05
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
View PDF8 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These arbitrary wave generators are suitable for low-power signal levels, but there are few records for the high-power arbitrary waveform generation technology required by wide-bandgap power semiconductor devices, and the high-precision high-power arbitrary waveform based on DDS (Direct Digital Synthesis) technology The generation technology is even harder to find

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-power arbitrary-waveform generation device and method
  • Large-power arbitrary-waveform generation device and method
  • Large-power arbitrary-waveform generation device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] like figure 1 As shown, a high-power arbitrary wave generating device includes a DSP control system, access to an arbitrary wave generator, a sinusoidal pulse width modulation circuit, AC / DC, DC / AC, a high-frequency filter circuit, a feedback sampling circuit, and an A / D A converter and an error amplifier circuit, the AC / DC output terminal is connected to the DC / AC input terminal, the DC / AC output terminal is connected to the input terminal of the high-frequency filter circuit, the output terminal of the high-frequency filter circuit outputs an AC signal, and the high-frequency filter circuit The output end is also connected with the input end of the feedback sampling circuit, the output end of the feedback sampling circuit is connected with the DSP control system through the A / D converter, the input end of the arbitrary waveform generator is connected to the DSP control system, and the output end of the arbitrary waveform generator is connected to the DSP control system...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a large-power arbitrary-waveform generation device and method. A DDS technology is adopted to realize a high-precision programmable-control function and an arbitrary-waveform generation function is realized on the basis of using an FPGA to realize DDS so that function indexes of large power and high precision and wide output range and arbitrary programmable control of waveforms and the like demanded in testing of a wide-band-gap semiconductor power device are satisfied and extremely high output precision and flexible output waveform control are achieved and thus a plurality of kinds of complex test demands of the wide-band-gap semiconductor power device can be met and test demands of the wide-band-gap semiconductor power device under conditions of high voltage, large current, high power and arbitrary waveforms are ensured finally. Through a practical test, a comparatively ideal result is obtained and invention design demands are completely met.

Description

technical field [0001] The invention relates to the field of arbitrary wave generation, in particular to a high-power arbitrary wave generating device and method. Background technique [0002] Since Si power devices are limited by their development, especially in the fields of high frequency, high temperature and high power, people have paid more and more attention to the development of wide bandgap semiconductor devices. The so-called wide band gap semiconductor (WBG) mainly refers to semiconductor materials with a band gap greater than 2.2 electron volts, including SiC, GaN and some other compound semiconductor materials. These materials generally have wide bandgap, high breakdown electric field, high thermal conductivity, and high electron saturation rate, so they are more suitable for making high-temperature, high-frequency and high-power devices than Si and GaAs. Therefore, the working characteristics and power test of wide bandgap power semiconductor devices are parti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26H02M5/44
Inventor 王文廷李斌王群王俊
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap