Nonvolatile memory cell and manufacturing method thereof

Abstract

The invention relates to a nonvolatile memory cell and a manufacturing method of the nonvolatile memory cell. The nonvolatile memory cell comprises a substrate, electric charge storage structures and a tunneling dielectric layer. An isolation structure is arranged in the substrate, active areas are defined, and the electric charge storage structures are arranged on the active areas respectively. The width of the bottom of each electric charge structure is equal to the width of the corresponding active area in essence, the first included angle between the side wall of each electric charge storage structure and the upper surface of the substrate is different from the second included angle between the side wall of each isolation structure and the upper surface of the substrate. The tunneling dielectric layer is arranged between the electric charge storage structures and the substrate, the lower surface of the tunneling dielectric layer is flat, and the upper surface of the tunneling dielectric layer is parallel to the upper surface of the substrate in essence.

Description

technical field [0001] The invention relates to an integrated circuit and its manufacturing method, in particular to a non-volatile memory cell and its manufacturing method. Background technique [0002] Non-volatile memory allows multiple data programming, reading, and erasing operations, and the data stored in it can be preserved even after the memory's power supply is interrupted. Due to these advantages, non-volatile memory has become a widely used memory in personal computers and electronic equipment. [0003] Well-known electrically programmable and erasable nonvolatile memory technologies using charge storage structures, such as Electronically Erasable Programmable Read-Only Memory (EEPROM) and flash memory Body (flash memory), has been used in various modern applications. Flash memory is designed with an array of memory cells that can be programmed and read independently. A typical flash memory cell stores charge in a floating gate. Another non-volatile memory si...

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Problems solved by technology

[0005] It can be seen that the above-mentioned existing non-volatile memory cell and its manufacturing method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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