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Light emitting device

A light-emitting device, nitride semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of improving crystallinity, improving optical properties and characteristics

Active Publication Date: 2018-09-07
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] As described above, according to conventional semiconductor substrates, semiconductor layers actually used as light-emitting devices or electronic devices cannot be grown with high quality and large thickness due to the occurrence of cracks in the compound semiconductor layer

Method used

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Experimental program
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Embodiment Construction

[0034] Hereinafter, a light emitting device package and a lighting system according to embodiments will be described in detail with reference to the accompanying drawings.

[0035] In the description of embodiments, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on another layer or substrate, or it can also be directly on another layer or substrate. There is an intermediate layer. Further, it will be understood that when a layer is referred to as being 'under' another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0036] figure 1 is a cross-sectional view showing the semiconductor substrate 10 according to the embodiment.

[0037] refer to figure 1...

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PUM

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Abstract

The present invention discloses a light-emitting device comprising a first conductive semiconductor layer on a substrate, and a control layer interposed between the substrate and the first conductive semiconductor layer. The control layer includes a first nitride semiconductor layer including aluminum (Al), a plurality of nanostructures on the first nitride semiconductor layer, and a plurality of nanostructures disposed on the first nitride semiconductor layer and including gallium (Ga) ) of the second nitride semiconductor layer. The light-emitting device of the present invention can improve the crystallinity of the conductive semiconductor layer and improve the optical properties and characteristics of the device.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0054094 (filed May 14, 2013), the contents of which are incorporated herein by reference. technical field [0003] Embodiments relate to a semiconductor device. [0004] Embodiments relate to a light emitting device. [0005] Embodiments relate to an electronic device. Background technique [0006] Various electronic devices and light emitting devices have been developed by using compound semiconductor materials. [0007] Electronic devices may include solar cells, photodetectors or power supply devices. [0008] Electronic devices or light emitting devices can be manufactured based on semiconductor substrates. A semiconductor substrate includes a growth substrate and a compound semiconductor layer grown on the growth substrate. [0009] The semiconductor substrate has various defects due to the lattice constant and thermal expansion coeff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02
CPCH01L21/0237H01L21/02458H01L21/02488H01L21/02505H01L21/02513H01L21/0254H01L21/02576H01L21/0262H01L33/007H01L33/025H01L33/12H01L21/20H01L33/02H01L33/325
Inventor 崔宰熏崔荣宰
Owner SUZHOU LEKIN SEMICON CO LTD