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Inverted top emission device and preparation method thereof

A top-emitting, inverted technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of low service life of OLED devices, and achieve the goal of not being easily oxidized by water and oxygen and ideal device life Effect

Active Publication Date: 2014-11-26
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide an inverted top-emitting device and a preparation method thereof, by changing the structure of the device to: ITO / Ag / ITO / Cs2CO3 / ETL / EML / HTL / MoO3 / Ag, avoiding the use of easily oxidizable Mg, Thereby solving the problem of low service life of OLED devices

Method used

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  • Inverted top emission device and preparation method thereof
  • Inverted top emission device and preparation method thereof
  • Inverted top emission device and preparation method thereof

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preparation example Construction

[0033] image 3 It is a flow chart of the preparation of the inverted top-emitting device of the present invention.

[0034] Such as image 3 As shown, the preparation method of the above-mentioned inverted top-emitting device includes the following steps:

[0035] S1, making ITO / Ag / ITO substrate;

[0036] In this embodiment, it is preferable to ultrasonically clean the ITO / Ag / ITO substrate with detergent and deionized water first, and then dry it for later use.

[0037] S2, making a cathode layer on the ITO / Ag / ITO substrate with cesium carbonate as a material;

[0038] In this embodiment, cesium carbonate is vapor-deposited on the ITO / Ag / ITO substrate by vapor deposition, and doped with CsF, LiF alkali metal salt as electron injection material, the thickness of the cesium carbonate is 1nm to 5nm, further Preferably, the thickness of cesium carbonate is 5nm.

[0039] Further, the cathode layer is also doped with an alkali metal salt for use as an electron injection materi...

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Abstract

The invention provides an inverted top emission device which comprises an ITO / Ag / ITO substrate, a cathode, an electron injection layer, an electron transmission layer, a light emitting layer, a hole transmission layer and an anode. The ITO / Ag / ITO substrate, the cathode, the electron injection layer, the electron transmission layer, the light emitting layer, the hole transmission layer and the anode are sequentially stacked. The cathode is made of cesium carbonate materials. According to the inverted top emission device and a preparation method of the inverted top emission device, on the basis of an existing ITO / Ag / ITO / HTL / EML / ETL / Mg:Ag structure, the device is changed into ITO / Ag / ITO / Cs2CO3 / ETL / EML / HTL / MoO3 / Ag, so that low work function metal Mg is prevented from being used, under the circumstances, it can be ensured that the device is not easily oxidized by water and oxygen even though packaging is not ideal, and then it can be ensured that the ideal device service life is obtained.

Description

technical field [0001] The invention belongs to the field of organic electroluminescent devices (OLEDs), and in particular relates to an inverted top-emitting device and a preparation method thereof. Background technique [0002] In recent years, the development of OLED has been widely concerned by scientific research and industry. OLED display has entered people's life, but its lifespan is still an important problem. Today's OLED devices generally use metals with high work function It is the anode, and the metal with low work function is the cathode, but the metal with low work function has the problem of being easily oxidized, and in the package, the general package surface is at the low work function, and the sealing of the device is particularly important. Even so, the OLED device Lifespan is still low. [0003] Organic light-emitting diodes are now widely developed. In the current industrial production device structure, such as figure 1 As shown, ITO / Ag / ITO is general...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56H10K99/00
CPCH10K50/82H10K50/81H10K71/60H10K85/342H10K50/11H10K2101/10H10K2102/321H10K2102/103H10K71/00H10K85/6572H10K50/15H10K50/16H10K85/633H10K2102/00H10K2102/351H10K2102/3026C01D7/00
Inventor 李艳虎林信志张斌李贵芳
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD