Manganese-doped alkaline-earth nitrogen-aluminium-silicon-salt luminescent film, preparation method and application thereof
A technology of alkaline earth nitrogen aluminum silicate and light-emitting thin film, which is applied in the directions of light-emitting materials, chemical instruments and methods, semiconductor devices, etc.
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[0030] The preparation method of the manganese-doped alkaline earth aluminum nitrogen silicon salt luminescent film comprises the following steps:
[0031] Step S11, loading the substrate into the reaction chamber of the chemical vapor deposition equipment, and setting the vacuum degree of the reaction chamber to 1.0×10 -2 Pa~1.0×10 -3 Pa.
[0032] In this embodiment, the substrate is indium tin amide glass (ITO). It can be understood that in other embodiments, it can also be fluorine-doped tin amide glass (FTO), aluminum-doped zinc amide (AZO) or Indium-doped zinc amide (IZO); the substrate was ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber;
[0033] Preferably, the vacuum degree of the reaction chamber is 4.0×10 -3 Pa.
[0034] Step S12 , heat-treating the substrate at 600° C. to 800° C. for 10 minutes to 30 minutes.
[0035] Step S13, adjusting the tempe...
Embodiment 1
[0067] The substrate is ITO glass, which is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 4.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 20 minutes, and then the temperature is lowered to 500°C. Turn on the rotary motor, adjust the rotating speed of the substrate holder to be 300 rev / min, feed the organic source (C 5 h 5 ) 2 Zn, (CH 3 ) 3 Al, silane (SiH 4 ) and methyl manganocene molar ratio is 1:0.95:1:0.035, the carrier gas is argon, and the flow rate of argon is 10sccm. Ammonia gas was introduced, and the flow rate of ammonia gas was 120 sccm, and the deposition of the film was started. The thickness of the film is deposited to 150nm, close the organic source and carrier gas, continue to pass the ammonia gas, the temperature drops belo...
Embodiment 2
[0073] The substrate is ITO glass, which is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 10 minutes, and then the temperature is lowered to 250°C. Turn on the rotating motor, adjust the rotating speed of the substrate holder to be 50 rpm, and turn on the machine source (C 5 h 5 ) 2 Zn, (CH 3 ) 3 Al, silane (SiH 4 ) and methyl manganocene molar ratio is 1:0.99:1:0.01, the carrier gas is argon, and the flow rate of argon is 10sccm. Ammonia gas was introduced, and the flow rate of the ammonia gas was 10 sccm, and the deposition of the film was started. The thickness of the film is deposited to 80nm, close the organic source and carrier gas, continue to pass the ammonia gas, the temperature drops...
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