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Transistors and methods of forming them

A technology of transistors and semiconductors, applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve problems such as complex manufacturing processes of integrated circuits or semiconductor devices, and achieve the effects of cost saving, process simplification, and easy integration

Active Publication Date: 2017-05-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, since in the prior art, the stresses required for the channel regions of PMOS transistors and NMOS transistors are different, when an integrated circuit or semiconductor device needs to have PMOS transistors and NMOS transistors at the same time, it is necessary to use different processes to make the PMOS transistors and NMOS transistors respectively. The channel region of NMOS transistors has different stress layers, which complicates the manufacturing process of integrated circuits or semiconductor devices

Method used

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  • Transistors and methods of forming them
  • Transistors and methods of forming them
  • Transistors and methods of forming them

Examples

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no. 1 example

[0044] Figure 4 to Figure 6 is a schematic cross-sectional structure diagram of the formation process of the transistor of the first embodiment of the present invention.

[0045] Please refer to Figure 4 , provide a substrate 200, the substrate 200 has a first region I, a first gate structure 201 is formed on the surface of the first region I; a semiconductor layer 202 is formed on the surface of the substrate 200 in the first region I, the The semiconductor layer 202 covers part of the sidewall of the first gate structure 201 , and the surface of the semiconductor layer 202 is lower than the top surface of the first gate structure 201 .

[0046] The substrate 200 provides a working platform for subsequent processes, and the substrate 200 is a single crystal silicon substrate or a silicon-on-insulator (SOI) substrate. The first region I is isolated from other regions of the substrate 200 by shallow trench isolation structures (not marked). In this embodiment, the crystal ...

no. 2 example

[0071] Figure 7 to Figure 10 It is a schematic cross-sectional structure diagram of the formation process of the transistor of the second embodiment of the present invention.

[0072] Please refer to Figure 7 , provide a substrate 300, the substrate 300 has a first region I and a second region II, a first gate structure 301 is formed on the surface of the first region I; a second gate structure 302 is formed on the surface of the second region II.

[0073] The materials and structures of the substrate 300 and the first gate electrode layer 301 are as described in the first embodiment and will not be repeated here.

[0074] The material and structure of the second gate structure 302 are the same as those of the first gate structure 301, so the first gate structure 301 and the second gate structure 302 are formed in the same process step, and the second gate structure The pole structure 302 includes: a second gate dielectric layer (not shown) on the surface of the substrate ...

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Abstract

The invention provides a transistor and a forming method thereof. The forming method comprises steps: a substrate provided with a first region is provided, and a first gate structure is formed on the surface of the first region; a semiconductor layer is formed on the surface of the substrate of the first region, wherein the semiconductor layer covers part of the side wall of the first gate structure; and the surface of the semiconductor layer is lower than the surface of the top part of the first gate structure; first openings are formed inside the semiconductor layer at two sides of the first gate structure, wherein the bottom part of each first opening is equal to or higher than the bottom part of the first gate structure; and a first stress layer is formed inside each first opening. According to the transistor forming method, integration on the process is easy, and the manufacturing process can be simplified.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a transistor and a forming method thereof. Background technique [0002] As the most basic semiconductor device, transistors are currently being widely used. With the increase of component density and integration of semiconductor devices, the gate size of transistors has become shorter than before; however, the shortened gate size of transistors will make transistors The short channel effect is generated, and then leakage current is generated, which finally affects the electrical performance of the semiconductor device. At present, in the prior art, the stress of the channel region of the transistor is mainly increased to increase the carrier mobility, thereby increasing the driving current of the transistor and reducing the leakage current in the transistor. [0003] In the prior art, the method for increasing the stress of the channel region of the transist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/8238H01L29/78H01L29/06H01L27/092
CPCH01L21/8238H01L21/823807H01L27/0922H01L29/66636H01L29/7842H01L29/7848
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP