A heavy ion microporous membrane etching device

A heavy-ion microporous film and etching device technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high labor intensity, reduced winding pass rate, film breakage, etc., and achieve high temperature control accuracy. , Reduce the labor intensity, and the effect of rolling the edges neatly

Active Publication Date: 2017-02-01
李忠海
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 1. In general, in order to ensure the process quality of etching products, it is necessary to require that the temperature difference of the etching solution at any hypothetical same horizontal position is less than 0.5°C; however, the use of traditional etching equipment often causes uneven etching temperature, and the same horizontal position in the etching box The temperature difference reaches 3°C, which will seriously affect the quality of etching products
[0007] 2. Due to the fluctuation of the traditional power supply voltage, the three-phase asynchronous motor involved in the winding part and the walking part cannot maintain a stable rotation speed, resulting in inconsistent travel speeds of the etching films wound on many transmission shafts (that is, uneven etching speeds), Usually the speed is not the same during the day and night, so that the pore size of the etched product is inconsistent, exceeding the deviation
It can only produce heavy ion etching membranes with a pore size of 4 μm or more, and cannot produce heavy ion etching membranes with a pore size of less than 2 μm
[0008] 3. In the etching equipment in the prior art, the tension of the etching film is always unstable during the etching process, or the tension of the etching film on multiple drive rollers is inconsistent, there are large and small, and when the tension is very small (that is, the tension is not enough), the etching The film is close to the state of stopping, or the etched film is wrapped around the transmission shaft (that is, the etched film is overlapped and folded together), and even the problem of film breakage is caused. Once the film is broken (that is, the etched film is stretched and torn due to force) , causing the etching process to stop, and will cause a waste of material and a waste of time
[0009] 4. In addition, because the etching equipment in the prior art does not have an automatic deviation correction device in the winding part, manual deviation correction is often required (that is, after deviation correction, it can ensure that the etching film on the entire production line is always along the drive shaft and the center of the winding roller. Laying direction parallel transmission), due to the high frequency of deviation correction, it is necessary to frequently correct the left and right directions of the etched film, so it will cause manual deviation correction labor-intensive; at the same time, it is difficult to guarantee the accuracy of manual deviation correction, which leads to low efficiency of etching operations and low yield. Roll pass rate drops

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A heavy ion microporous membrane etching device
  • A heavy ion microporous membrane etching device
  • A heavy ion microporous membrane etching device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] see Figure 1a and Figure 1b A heavy ion microporous membrane etching device provided in Embodiment 1 of the present invention includes an unwinding device 101, an etching box 102, a cleaning box 105, a drying box 106, a winding device 109 and a heavy ion microporous membrane etching device arranged in sequence. The control system of the hole film etching device;

[0072] Wherein, the control system includes a PLC control system and an HMI human-computer interaction device electrically connected to the PLC control system;

[0073] The etching box 102 includes a box body and a shaft support device arranged in the box body; The pedestal structure described in , the two can be replaced by each other);

[0074] see image 3 , the shaft support device is in the etching liquid, the top is fixed with a plurality of transmission shafts 104A, and the bottom of the shaft support device is fixed with a plurality of follower shafts 104E; the drive shaft 104A and the follower s...

Embodiment 2

[0116] Figure 5 Shown is another etching box 202 provided by Embodiment 2 of the present invention. Except for the installation of the heater and the installation of the lower follower shaft, the structure is the same as that of the etching box 102 shown in FIG. 1 , and its functions and functions are consistent. . Wherein, the shaft support device is a shaft frame 205; each shaft frame 205 is composed of a top beam and two ladder frames, and the bottoms of the two ladder frames are respectively equipped with the follower shaft 205A and the follower shaft 205B. A transmission shaft 207 is arranged in the space between the two ladder frames and below the top beam. The stainless steel pipe 204A is sealed and welded to the box body, and is socketed with the heater 204 . And adopt to directly weld the stainless steel pipe 204A in the etching box body, the stainless steel pipe 204A and the box body are sealed and welded, and then penetrate the heater 204, and the power lead wire...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a heavy-ion micro-porous membrane etching device which comprises an unreeling device, an etching box, a cleaning box, a drying box, a reeling device and a control system for the heavy-ion micro-porous membrane etching device, wherein the unreeling device, the etching box, the cleaning box, the drying box and the reeling device are arranged in sequence. The control system comprises a PLC control system and a human-computer interaction (HMI) device electrically connected with the PLC control system. The heavy-ion micro-porous membrane etching device is novel in structure, stable in performance and high in automation control degree, and the quality of produced etching membranes are good.

Description

technical field [0001] The invention relates to the technical field of etching process equipment, in particular to a heavy ion microporous membrane etching device. Background technique [0002] At present, it is used in the processing of precision etching products of thin electronic parts in aviation, machinery, and chemical industries. Especially in semiconductor manufacturing processes, etching is an indispensable technology; [0003] There is an etching device in the prior art, which is widely used; for details, see the attached Figure 9a , Figure 9b as well as Figure 9c The etching device in the prior art mainly consists of an unwinding device 301, an etching box 302, a cleaning box 305, a drying box 307, a winding device 308, an upper cover 303, an etching box drive sprocket 304, and a cleaning box drive sprocket 306, etching case follower sprocket 312, cleaning case follower sprocket 313, drying case sprocket 315 and other structural components. [0004] Among th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/3065
CPCH01L21/3065H01L21/67109H01L21/67253
Inventor 李忠海
Owner 李忠海
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products