Method for improving PERC (passivated emitter rear contact) battery back slotting contact

A back and battery technology, applied in the field of solar cells, can solve problems such as thermal damage, reduced minority carrier life, and poor battery performance, and achieve the effects of reducing production costs, improving matching, and reducing fragmentation rates.

Inactive Publication Date: 2014-12-10
ZHEJIANG JINKO SOLAR CO LTD +1
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of the chemical etching method are: the operation process is complicated, it will also bring some pollution of metal ion impurities, and the chemicals are harmful to the environment
Disadvantages of laser slotting: Laser slotting is used before screen printin...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving PERC (passivated emitter rear contact) battery back slotting contact

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] as attached figure 1 Shown is a method for improving PERC battery back slot contact, including silicon wafer polishing, texturing, diffusion, edge removal and PSG removal, double-sided passivation, screen printing electrodes and sintering steps in sequence, characterized in that : After the step of de-edge junction and PSG removal, the step of screen-printing Al paste on the back and forming a grid-shaped aluminum back field is added, and after the silicon wafer prepared with a grid-shaped aluminum back field is passivated, the back electrode is printed on the back The busbar burns through the passivation layer so as to be in contact with the grid line-shaped aluminum back field, which can fully collect carriers and save the back slotting step after the conventional double-sided passivation step; the grid line-shaped aluminum back field is composed of It consists of a number of neatly arranged thin grid lines 1 . The side length of the grid-shaped aluminum back field i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Side lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for improving PERC (passivated emitter and rear cell) cell back slot contact. The method includes the sequential steps of silicon wafer polishing, texturing, diffusion, edge etching and PSG (phospho silicate glass) removal, two-side passivation, electrode screen printing and sintering. The method is characterized in that a step where back screen printing of Al paste is performed to form a grating aluminum back field is added to the step of edge etching and PSG removal; after a silicon wafer with the grating aluminum back field is passivated, a main gate of the a back printed electrode burns through a passivation layer to be in contact with the grating aluminum back field; current carriers can be fully collected, and the step of back slotting before the conventional two-side passivation step is omitted; the grating aluminum back field is composed of a plurality of fine gratings arranged in order. The method has the advantages that the step of PERC cell back slotting is omitted, the process is simple, production efficiency is improved, manufacturing cost is lowered, and the performance is better.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for improving the slotted contact on the back of PERC cells. Background technique [0002] The conventional preparation process of the existing PERC cell includes: silicon wafer polishing, texturing, diffusion, edge removal and PSG removal, double-sided passivation, back groove, screen printing electrode and sintering steps. Among them, the back groove is to realize the back contact of the PERC battery and form the back electrode. The quality of the groove directly affects the performance of the battery. Generally, laser and chemical etching are used for groove. The disadvantages of the chemical etching method are: the operation process is complicated, and it will also bring some pollution of metal ion impurities, and the chemicals will cause harm to the environment. Disadvantages of laser slotting: Laser slotting is used before screen printing. After screen printin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/768H01L31/18
CPCH01L31/02245Y02P70/50
Inventor 郝彦磊蒋方丹金浩陈康平
Owner ZHEJIANG JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap