Image sensor and forming method thereof

Abstract

Disclosed are an image sensor and a forming method thereof. The image sensor comprises a semiconductor substrate, multiple independent photodiodes and doped isolation areas, the independent photodiodes are located in the semiconductor substrate and are arrayed in matrix, and the each doped isolation area is located in the semiconductor substrate between every two neighboring photodiodes. The image sensor is improved in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor and a forming method thereof. Background technique [0002] Image sensors are semiconductor devices that convert optical image signals into electrical signals. Products with image sensors as key components have become the focus of the current and future industry, attracting investment from many manufacturers. [0003] In terms of product categories, image sensor products are mainly divided into Charge-coupled Device image sensor (CCD image sensor for short), Complementary Metal Oxide Semiconductor image sensor (CMOS sensor for short). CMOS image sensor is a fast-growing solid-state image sensor. Since the image sensor part and the control circuit part of the CMOS image sensor are integrated in the same chip, the CMOS image sensor has small size, low power consumption, and low price. Compared with The traditional CCD (Charge Coupled) image sensor has more ...

AI Technical Summary

Problems solved by technology

[0005] When the light intensity of the existing image sensor is too large, the potential well of the pixel is filled with electrons, and when the light intensity is further increased, the excess electrons will overflow outward and enter the adjacent pixel area, causing the image to appear halo Phenomenon that seriously affects the imaging quality of the image sensor

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