Image sensor and forming method thereof

An image sensor and pixel unit technology, applied in the semiconductor field, can solve the problems of image halo, affecting the imaging quality of the image sensor, etc., and achieve the effects of simple process method, avoiding halo appearance, and improving performance

Active Publication Date: 2014-12-10
GALAXYCORE SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] When the light intensity of the existing image sensor is too large, the potential well of the pixel is filled with electrons, and when the light intensity is further increased,

Method used

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  • Image sensor and forming method thereof
  • Image sensor and forming method thereof
  • Image sensor and forming method thereof

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Embodiment Construction

[0048] As mentioned in the background art, existing image sensors are prone to halo phenomenon, which seriously affects the imaging quality of the image sensor.

[0049] In an embodiment of the present invention, an image sensor and a method for forming the same are provided. The image sensor includes: a semiconductor substrate; several discrete photodiodes located in the semiconductor substrate, the photodiodes are arranged in a matrix; A doped isolation region beneath a portion of the semiconductor substrate between adjacent photodiodes. The doped isolation region is located in the semiconductor substrate below the photodiode, which can reduce the lateral diffusion of overflow electrons in the semiconductor substrate, thereby improving the halo phenomenon of the image sensor.

[0050] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conj...

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Abstract

Disclosed are an image sensor and a forming method thereof. The image sensor comprises a semiconductor substrate, multiple independent photodiodes and doped isolation areas, the independent photodiodes are located in the semiconductor substrate and are arrayed in matrix, and the each doped isolation area is located in the semiconductor substrate between every two neighboring photodiodes. The image sensor is improved in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor and a forming method thereof. Background technique [0002] Image sensors are semiconductor devices that convert optical image signals into electrical signals. Products with image sensors as key components have become the focus of the current and future industry, attracting investment from many manufacturers. [0003] In terms of product categories, image sensor products are mainly divided into Charge-coupled Device image sensor (CCD image sensor for short), Complementary Metal Oxide Semiconductor image sensor (CMOS sensor for short). CMOS image sensor is a fast-growing solid-state image sensor. Since the image sensor part and the control circuit part of the CMOS image sensor are integrated in the same chip, the CMOS image sensor has small size, low power consumption, and low price. Compared with The traditional CCD (Charge Coupled) image sensor has more ...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 李杰李文强
Owner GALAXYCORE SHANGHAI
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