Method for improving p-type ohmic contact performance of GaN-based light-emitting device

Abstract

The invention discloses a method for improving the p-type ohmic contact performance of a GaN-based light-emitting device. The method comprises the following steps of: carrying out activation treatment on the p-type GaN of a GaN-based light-emitting epitaxial wafer taking sapphire as a substrate; producing an indium tin oxide ITO layer with a thickness of 100-300nm at one side of the p-type GaN; carrying out annealing treatment on a sample in a nitrogen environment, an annealing temperature being kept at 450-550 DEG C, and an annealing time being 1-15 minutes; corroding by acid solution to remove indium tin oxide ITO; carrying out a p-type GaN ohmic contact process for the traditional structure on the surface of the sample after the indium tin oxide ITO is removed, so as to complete production for a p-type contact electrode. With the adoption of the method disclosed by the invention, the binding energy of Ga2p on the surface of the p-type GaN can be reduced after ITO annealing, thus reducing the Schottky contact barrier height, therefore, obtaining for a more excellent ohmic contact characteristic is facilitated.

Description

Technical field [0001] The present invention relates to the field of semiconductor materials and devices, in particular to a method for improving the p-type ohmic contact performance of a GaN-based light-emitting device, and is suitable for GaN-based optoelectronic devices, especially for GaN-based light-emitting diodes and lasers. Background technique [0002] The third-generation semiconductor material represented by GaN has a high radiation recombination efficiency due to its direct band gap. By adjusting the doping element and the doping concentration, the light-emitting wavelength can cover the ultraviolet to the near-infrared, so as to realize RGB full-color display. Therefore, GaN-based materials are ideal materials for making visible light-emitting devices. Good ohmic contact characteristics are an important basis for realizing high-efficiency light-emitting devices. However, because the work function (7.5eV) of p-type GaN material is larger than that of general metals, ...

AI Technical Summary

Problems solved by technology

However, since the work function (7.5eV) of p-type GaN material is larger than that of ordinary metals, there is no suitable metal for p-type GaN ohmic contact; in addition, high-concentration doping of p-type GaN material is difficult, which increases the production Difficulty of good p-type ohmic contact for GaN materials

[0003] Many research groups at home and abroad are constantly exploring ways to reduce the ohmic contact of p-type GaN. However, due to the above-mentioned manufacturing difficulties, the ohmic contact of p-type GaN materials needs to be further improved.

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