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Production method of metal films and device for manufacturing metal films

A technology of metal thin film and production method, which is applied in the direction of metal material coating process, vacuum evaporation plating, coating, etc., to achieve the effect of improving the overall adhesion and reducing waste

Active Publication Date: 2014-12-24
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Embodiments of the present invention provide a method and device for manufacturing a metal thin film, which are used to solve the technical problem of faults between the supplementary deposited metal thin film and the existing metal thin film in the prior art, and improve the overall adhesion of the metal thin film

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  • Production method of metal films and device for manufacturing metal films
  • Production method of metal films and device for manufacturing metal films
  • Production method of metal films and device for manufacturing metal films

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Embodiment 1

[0056] In the process of manufacturing semiconductors, metal thin film deposition is often required. Since each component of semiconductor devices has strict requirements, the thickness of the metal thin film must reach the standard thickness. In order to avoid directly scrapping the crystals that do not meet the standard by sputtering deposition, This causes a waste of resources. This application provides the following processing methods for crystals whose metal film thickness is not up to the standard deposited by the sputtering deposition operation.

[0057] Please refer to figure 1 , An embodiment of the present application provides a method for manufacturing a metal thin film, the method including:

[0058] S101: Pass a preset volume of inert gas into the vacuum radio frequency cavity.

[0059] Specifically, the vacuum radio frequency cavity can be obtained by vacuuming with a vacuum pump, and then a preset volume of inert gas is passed into the radio frequency cavity. The pres...

Embodiment 2

[0082] Please refer to Image 6 , An embodiment of the present application provides an apparatus for manufacturing a metal thin film, including:

[0083] Vacuum pump 601;

[0084] The radio frequency cavity 602 is connected to the vacuum pump 601, and after being evacuated by the vacuum pump 601 and injected with a preset volume of inert gas, it is used to perform radio frequency bombardment on the first substance including the first metal film and the first oxide film , Obtaining a second substance after removing the first oxide film, wherein the first substance is formed after the first operation of sputtering and depositing the first metal film, and the thickness of the first metal film is less than a standard thickness;

[0085] The transmission cavity 603 is connected to the radio frequency cavity 602, and the transmission cavity 603 is used to transfer the second substance from the radio frequency cavity 602 after being evacuated by the vacuum pump 601;

[0086] The sputtering ...

Embodiment 3

[0096] Please refer to Figure 7 , An embodiment of the present application provides an apparatus for manufacturing a metal thin film, including:

[0097] The gas processing module 701 is used to pass a preset volume of inert gas into the vacuum radio frequency cavity;

[0098] The substance transfer module 702 is used to transfer the first substance formed after the first sputtering deposition operation into the radio frequency cavity, wherein the surface of the first substance includes a first metal film and a first oxide film, so The first metal film is a metal film with a thickness less than a standard thickness formed after the first sputtering deposition operation, and the first oxide film is formed on the surface of the first metal film;

[0099] The radio frequency bombardment module 703 is used to apply a preset radio frequency power to the radio frequency cavity so that the inert gas ionizes and bombards the first oxide film, thereby removing the first oxide film to obtain ...

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Abstract

The invention discloses a production method of metal films and a device for manufacturing metal films. The method comprises the following steps: an inert gas with a preset volume is fed in a vacuum radio frequency cavity; a first substance formed after a first sputtering deposition operation is transferred into the radio frequency cavity, wherein the surface of the first substance contains a first metal film and a first oxide film, the thickness of the first metal film is smaller than a standard thickness, and the first oxide film is formed on the surface of the first metal film; a power supply with a preset radio frequency power is applied on the radio frequency cavity to remove the first oxide film to obtain a second substance; and the second substance is transferred into a vacuum sputtering deposition cavity through a vacuum transmission cavity, and a second sputtering deposition operation is performed for the second substance to form a second metal film on the surface of the second substance, wherein the total thickness of the first metal film and the second metal film is equal to the standard thickness. The method solves the technical problem of existence of a fault between the supplementary deposited metal film and the existing metal film in the prior art.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a method and device for manufacturing a metal thin film. Background technique [0002] With the continuous development of science and technology, semiconductor technology is becoming more and more perfect, and the requirements for various manufacturing processes are getting higher and higher, such as thin film deposition, etching, doping and other processes. The deposition of metal thin films requires the deposited metal The film has strong adhesion and high purity. [0003] In the prior art, when metal film deposition is performed on semiconductor components, sputtering deposition technology is used to bombard the surface of the target with high-energy particles in a vacuum environment, so that the bombarded particles are deposited on the surface of the base component. The entire bombardment deposition process is usually completed at one time to ensure that the metal fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/40
Inventor 李冠欣崔晓娟梁欣陈珊张玉娟
Owner FOUNDER MICROELECTRONICS INT